DE3624566C2 - - Google Patents
Info
- Publication number
- DE3624566C2 DE3624566C2 DE3624566A DE3624566A DE3624566C2 DE 3624566 C2 DE3624566 C2 DE 3624566C2 DE 3624566 A DE3624566 A DE 3624566A DE 3624566 A DE3624566 A DE 3624566A DE 3624566 C2 DE3624566 C2 DE 3624566C2
- Authority
- DE
- Germany
- Prior art keywords
- mask
- front surface
- silicon
- carrier
- membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012528 membrane Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000001015 X-ray lithography Methods 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60160689A JPS6249623A (ja) | 1985-07-19 | 1985-07-19 | Ｘ線露光マスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3624566A1 DE3624566A1 (de) | 1987-04-16 |
| DE3624566C2 true DE3624566C2 (enrdf_load_stackoverflow) | 1989-11-02 |
Family
ID=15720336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863624566 Granted DE3624566A1 (de) | 1985-07-19 | 1986-07-21 | Maske fuer roentgenstrahl-lithographie |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS6249623A (enrdf_load_stackoverflow) |
| DE (1) | DE3624566A1 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0217627A (ja) * | 1988-07-06 | 1990-01-22 | Fujitsu Ltd | Ｘ線露光装置 |
| JP2723582B2 (ja) * | 1989-01-09 | 1998-03-09 | キヤノン株式会社 | Ｘ線マスク |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52105777A (en) * | 1976-03-02 | 1977-09-05 | Toshiba Corp | Microscopic diagram transcribing device |
| JPS55157739A (en) * | 1979-05-29 | 1980-12-08 | Nec Corp | X-ray exposure mask |
| DE3435177A1 (de) * | 1983-09-26 | 1985-04-11 | Canon K.K., Tokio/Tokyo | Maske fuer lithographische zwecke |
| JPS6068339A (ja) * | 1983-09-26 | 1985-04-18 | Canon Inc | リソグラフィ−用マスク構造体 |
| JPS60180123A (ja) * | 1984-02-13 | 1985-09-13 | Yokogawa Hewlett Packard Ltd | Ｘ線マスク用構造体 |
| US4632871A (en) * | 1984-02-16 | 1986-12-30 | Varian Associates, Inc. | Anodic bonding method and apparatus for X-ray masks |
| JPS60198819A (ja) * | 1984-03-23 | 1985-10-08 | Canon Inc | リソグラフイ−用マスク構造体 |
| JPS60251620A (ja) * | 1984-05-29 | 1985-12-12 | Hitachi Ltd | Ｘ線マスク |
| DE3425063A1 (de) * | 1984-07-07 | 1986-02-06 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Maske fuer die roentgenlithographie |
| JPS61140942A (ja) * | 1984-12-13 | 1986-06-28 | Canon Inc | リソグラフイ−用マスク構造体 |
-
1985
- 1985-07-19 JP JP60160689A patent/JPS6249623A/ja active Pending
-
1986
- 1986-07-21 DE DE19863624566 patent/DE3624566A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6249623A (ja) | 1987-03-04 |
| DE3624566A1 (de) | 1987-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |