JPS6239820B2 - - Google Patents

Info

Publication number
JPS6239820B2
JPS6239820B2 JP55064310A JP6431080A JPS6239820B2 JP S6239820 B2 JPS6239820 B2 JP S6239820B2 JP 55064310 A JP55064310 A JP 55064310A JP 6431080 A JP6431080 A JP 6431080A JP S6239820 B2 JPS6239820 B2 JP S6239820B2
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor element
contact area
contact
alpha rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55064310A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56158467A (en
Inventor
Natsuo Tsubochi
Haruhiko Abe
Hirotsugu Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6431080A priority Critical patent/JPS56158467A/ja
Publication of JPS56158467A publication Critical patent/JPS56158467A/ja
Publication of JPS6239820B2 publication Critical patent/JPS6239820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W42/25—
    • H10W72/07551—
    • H10W72/50—
    • H10W72/536—
    • H10W72/932—
    • H10W90/722—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Memories (AREA)
JP6431080A 1980-05-12 1980-05-12 Semiconductor device Granted JPS56158467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6431080A JPS56158467A (en) 1980-05-12 1980-05-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6431080A JPS56158467A (en) 1980-05-12 1980-05-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56158467A JPS56158467A (en) 1981-12-07
JPS6239820B2 true JPS6239820B2 (enExample) 1987-08-25

Family

ID=13254530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6431080A Granted JPS56158467A (en) 1980-05-12 1980-05-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56158467A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988864A (ja) * 1982-11-12 1984-05-22 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US6682954B1 (en) 1996-05-29 2004-01-27 Micron Technology, Inc. Method for employing piggyback multiple die #3
US6208018B1 (en) 1997-05-29 2001-03-27 Micron Technology, Inc. Piggyback multiple dice assembly
US6900528B2 (en) 2001-06-21 2005-05-31 Micron Technology, Inc. Stacked mass storage flash memory package

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5845822B2 (ja) * 1975-03-07 1983-10-12 セイコーエプソン株式会社 シユウセキカイロ
JPS5339068A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Semiconductor device
JPS6022498B2 (ja) * 1976-11-22 1985-06-03 日本電気株式会社 半導体装置
JPS5552246A (en) * 1978-10-13 1980-04-16 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS56158467A (en) 1981-12-07

Similar Documents

Publication Publication Date Title
US6043109A (en) Method of fabricating wafer-level package
US6962829B2 (en) Method of making near chip size integrated circuit package
US6150193A (en) RF shielded device
US4541003A (en) Semiconductor device including an alpha-particle shield
US6638792B2 (en) Method for fabricating BOC semiconductor package
JP4068801B2 (ja) 半導体装置
JPS61248541A (ja) 半導体装置
US20250293106A1 (en) Semiconductor package
US6650015B2 (en) Cavity-down ball grid array package with semiconductor chip solder ball
EP0029858B1 (en) Semiconductor device
US7030489B2 (en) Multi-chip module having bonding wires and method of fabricating the same
JPS614250A (ja) 半導体装置用パツケ−ジ
JPS5655067A (en) Semiconductor integrated circuit device
JP3532693B2 (ja) 半導体装置
TWI708360B (zh) 半導體裝置
JPS6239820B2 (enExample)
KR950006970B1 (ko) 반도체 장치 및 그 제조방법
JPS5988864A (ja) 半導体装置の製造方法
JPS6220707B2 (enExample)
JPS58222546A (ja) 半導体装置
JP2000091339A (ja) 半導体装置およびその製造方法
JPH10214933A (ja) 半導体装置とその製造方法
JPH05206320A (ja) マルチチップモジュール
JP2863287B2 (ja) 半導体装置のボンディングパッド電極の構造
JPS5891646A (ja) 半導体装置