JPS6232608B2 - - Google Patents

Info

Publication number
JPS6232608B2
JPS6232608B2 JP12854280A JP12854280A JPS6232608B2 JP S6232608 B2 JPS6232608 B2 JP S6232608B2 JP 12854280 A JP12854280 A JP 12854280A JP 12854280 A JP12854280 A JP 12854280A JP S6232608 B2 JPS6232608 B2 JP S6232608B2
Authority
JP
Japan
Prior art keywords
transition layer
layer
gaas
transition
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12854280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5753927A (en
Inventor
Yasuhiro Ishii
Noryuki Shimano
Yoshimoto Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP12854280A priority Critical patent/JPS5753927A/ja
Publication of JPS5753927A publication Critical patent/JPS5753927A/ja
Publication of JPS6232608B2 publication Critical patent/JPS6232608B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
JP12854280A 1980-09-18 1980-09-18 Compound semiconductor device Granted JPS5753927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12854280A JPS5753927A (en) 1980-09-18 1980-09-18 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12854280A JPS5753927A (en) 1980-09-18 1980-09-18 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5753927A JPS5753927A (en) 1982-03-31
JPS6232608B2 true JPS6232608B2 (enFirst) 1987-07-15

Family

ID=14987327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12854280A Granted JPS5753927A (en) 1980-09-18 1980-09-18 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5753927A (enFirst)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220112012A (ko) * 2021-02-03 2022-08-10 충북대학교 산학협력단 하향 가압형 고관절 탈구방지 예방의복
KR20220112011A (ko) * 2021-02-03 2022-08-10 충북대학교 산학협력단 상향 가압형 고관절 탈구방지 예방의복

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529455A (en) * 1983-10-28 1985-07-16 At&T Bell Laboratories Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy
US4514748A (en) * 1983-11-21 1985-04-30 At&T Bell Laboratories Germanium p-i-n photodetector on silicon substrate
JPS60231333A (ja) * 1984-04-27 1985-11-16 Sanyo Electric Co Ltd 半導体構造
JPS61107721A (ja) * 1984-10-31 1986-05-26 Matsushita Electric Ind Co Ltd ３−５化合物単結晶薄膜をそなえたＳｉ基板およびその製造方法
JPS61107719A (ja) * 1984-10-31 1986-05-26 Matsushita Electric Ind Co Ltd ３−５化合物単結晶薄膜をそなえたＳｉ基板およびその製造方法
JPH0669113B2 (ja) * 1986-04-23 1994-08-31 株式会社日立製作所 半導体レ−ザ装置
US5011550A (en) * 1987-05-13 1991-04-30 Sharp Kabushiki Kaisha Laminated structure of compound semiconductors
JPS63310111A (ja) * 1987-06-12 1988-12-19 Hitachi Cable Ltd 化合物半導体ウェハ及びその製造方法
US5221413A (en) * 1991-04-24 1993-06-22 At&T Bell Laboratories Method for making low defect density semiconductor heterostructure and devices made thereby
JPH0567769A (ja) * 1991-09-05 1993-03-19 Sony Corp ３次元光電子集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220112012A (ko) * 2021-02-03 2022-08-10 충북대학교 산학협력단 하향 가압형 고관절 탈구방지 예방의복
KR20220112011A (ko) * 2021-02-03 2022-08-10 충북대학교 산학협력단 상향 가압형 고관절 탈구방지 예방의복

Also Published As

Publication number Publication date
JPS5753927A (en) 1982-03-31

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