JPS6231815B2 - - Google Patents

Info

Publication number
JPS6231815B2
JPS6231815B2 JP55159933A JP15993380A JPS6231815B2 JP S6231815 B2 JPS6231815 B2 JP S6231815B2 JP 55159933 A JP55159933 A JP 55159933A JP 15993380 A JP15993380 A JP 15993380A JP S6231815 B2 JPS6231815 B2 JP S6231815B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
film
layer
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55159933A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5784134A (en
Inventor
Shigeru Honjo
Shoichi Kitane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55159933A priority Critical patent/JPS5784134A/ja
Publication of JPS5784134A publication Critical patent/JPS5784134A/ja
Publication of JPS6231815B2 publication Critical patent/JPS6231815B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Bipolar Transistors (AREA)
JP55159933A 1980-11-13 1980-11-13 Manufacture of semiconductor substrate Granted JPS5784134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55159933A JPS5784134A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55159933A JPS5784134A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5784134A JPS5784134A (en) 1982-05-26
JPS6231815B2 true JPS6231815B2 (enExample) 1987-07-10

Family

ID=15704316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55159933A Granted JPS5784134A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5784134A (enExample)

Also Published As

Publication number Publication date
JPS5784134A (en) 1982-05-26

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