JPS5784134A - Manufacture of semiconductor substrate - Google Patents

Manufacture of semiconductor substrate

Info

Publication number
JPS5784134A
JPS5784134A JP55159933A JP15993380A JPS5784134A JP S5784134 A JPS5784134 A JP S5784134A JP 55159933 A JP55159933 A JP 55159933A JP 15993380 A JP15993380 A JP 15993380A JP S5784134 A JPS5784134 A JP S5784134A
Authority
JP
Japan
Prior art keywords
film
semiconductor substrate
layers
silicon oxide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55159933A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6231815B2 (enExample
Inventor
Shigeru Honjo
Shoichi Kitane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55159933A priority Critical patent/JPS5784134A/ja
Publication of JPS5784134A publication Critical patent/JPS5784134A/ja
Publication of JPS6231815B2 publication Critical patent/JPS6231815B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Bipolar Transistors (AREA)
JP55159933A 1980-11-13 1980-11-13 Manufacture of semiconductor substrate Granted JPS5784134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55159933A JPS5784134A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55159933A JPS5784134A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5784134A true JPS5784134A (en) 1982-05-26
JPS6231815B2 JPS6231815B2 (enExample) 1987-07-10

Family

ID=15704316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55159933A Granted JPS5784134A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5784134A (enExample)

Also Published As

Publication number Publication date
JPS6231815B2 (enExample) 1987-07-10

Similar Documents

Publication Publication Date Title
US3909332A (en) Bonding process for dielectric isolation of single crystal semiconductor structures
TW334580B (en) Method of manufacture semiconductor device
US3454835A (en) Multiple semiconductor device
JPS54116888A (en) Manufacture of dielectric separate substrate
JPS5516464A (en) Method of forming wafer for semiconductor device
JPS5784134A (en) Manufacture of semiconductor substrate
JPS5461489A (en) Manufacture for semiconductor device
JPS56144530A (en) Manufacture of semiconductor device
JPS57204146A (en) Manufacture of semiconductor device
JPS5756942A (en) Manufacture of silicon semiconductor device
US5484745A (en) Method for forming a semiconductor sensor
EP0278159A3 (en) Method of manufacturing a semiconductor device comprising an isolation structure
JP2608443B2 (ja) 半導体ウエハの製造方法
JPS56130940A (en) Manufacture of semiconductor device
JPS5779643A (en) Semiconductor device
JPS56130941A (en) Manufacture of semiconductor device
JPS5799736A (en) Fabrication of semiconductor substrate
JPS57211727A (en) Manufacture of semiconductor device
KR930006996A (ko) 반도체 압력센서 제조방법
JPS56162855A (en) Forming method for insulator region
JPS56101744A (en) Manufacture of semiconductor device
JPS571243A (en) Manufacture of semiconductor device
JPS551117A (en) Manufacture of semiconductor device
JPS6424319A (en) Formation of superconductor thin film
JPS5799735A (en) Diffusing method in semiconductor wafer