JPS641066B2 - - Google Patents

Info

Publication number
JPS641066B2
JPS641066B2 JP55159935A JP15993580A JPS641066B2 JP S641066 B2 JPS641066 B2 JP S641066B2 JP 55159935 A JP55159935 A JP 55159935A JP 15993580 A JP15993580 A JP 15993580A JP S641066 B2 JPS641066 B2 JP S641066B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
oxide film
impurity layer
high concentration
concentration impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55159935A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5784171A (en
Inventor
Fumio Tobioka
Shoichi Kitane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55159935A priority Critical patent/JPS5784171A/ja
Publication of JPS5784171A publication Critical patent/JPS5784171A/ja
Publication of JPS641066B2 publication Critical patent/JPS641066B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP55159935A 1980-11-13 1980-11-13 Manufacture of semiconductor substrate Granted JPS5784171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55159935A JPS5784171A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55159935A JPS5784171A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5784171A JPS5784171A (en) 1982-05-26
JPS641066B2 true JPS641066B2 (enExample) 1989-01-10

Family

ID=15704363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55159935A Granted JPS5784171A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5784171A (enExample)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313921B2 (enExample) * 1971-09-23 1978-05-13
JPS5123073A (en) * 1974-08-21 1976-02-24 Hitachi Ltd Handotaisochino seizoho
JPS5941030B2 (ja) * 1976-08-30 1984-10-04 株式会社東芝 水力発電所の出力制限装置
JPS54119883A (en) * 1978-03-10 1979-09-18 Hitachi Ltd Manufacture for semiconductor device

Also Published As

Publication number Publication date
JPS5784171A (en) 1982-05-26

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