JPS6226182B2 - - Google Patents
Info
- Publication number
- JPS6226182B2 JPS6226182B2 JP56083686A JP8368681A JPS6226182B2 JP S6226182 B2 JPS6226182 B2 JP S6226182B2 JP 56083686 A JP56083686 A JP 56083686A JP 8368681 A JP8368681 A JP 8368681A JP S6226182 B2 JPS6226182 B2 JP S6226182B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- polycrystalline silicon
- silicon layer
- dioxide film
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Recrystallisation Techniques (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8368681A JPS57197834A (en) | 1981-05-29 | 1981-05-29 | Manufacture of insulated and isolated substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8368681A JPS57197834A (en) | 1981-05-29 | 1981-05-29 | Manufacture of insulated and isolated substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57197834A JPS57197834A (en) | 1982-12-04 |
| JPS6226182B2 true JPS6226182B2 (enrdf_load_stackoverflow) | 1987-06-08 |
Family
ID=13809369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8368681A Granted JPS57197834A (en) | 1981-05-29 | 1981-05-29 | Manufacture of insulated and isolated substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57197834A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5225235A (en) * | 1987-05-18 | 1993-07-06 | Osaka Titanium Co., Ltd. | Semiconductor wafer and manufacturing method therefor |
| US4925809A (en) * | 1987-05-23 | 1990-05-15 | Osaka Titanium Co., Ltd. | Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor |
| JP7697397B2 (ja) * | 2022-04-15 | 2025-06-24 | 信越半導体株式会社 | ポリシリコンウェーハの製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS523862Y2 (enrdf_load_stackoverflow) * | 1973-07-09 | 1977-01-27 | ||
| FR2369912A1 (fr) * | 1976-11-08 | 1978-06-02 | Raychem Sa Nv | Objet a reprise thermique |
-
1981
- 1981-05-29 JP JP8368681A patent/JPS57197834A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57197834A (en) | 1982-12-04 |
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