JPS57197834A - Manufacture of insulated and isolated substrate - Google Patents

Manufacture of insulated and isolated substrate

Info

Publication number
JPS57197834A
JPS57197834A JP8368681A JP8368681A JPS57197834A JP S57197834 A JPS57197834 A JP S57197834A JP 8368681 A JP8368681 A JP 8368681A JP 8368681 A JP8368681 A JP 8368681A JP S57197834 A JPS57197834 A JP S57197834A
Authority
JP
Japan
Prior art keywords
substrate
crystal
end part
dioxide
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8368681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6226182B2 (enrdf_load_stackoverflow
Inventor
Takanobu Satou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP8368681A priority Critical patent/JPS57197834A/ja
Publication of JPS57197834A publication Critical patent/JPS57197834A/ja
Publication of JPS6226182B2 publication Critical patent/JPS6226182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP8368681A 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate Granted JPS57197834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8368681A JPS57197834A (en) 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8368681A JPS57197834A (en) 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate

Publications (2)

Publication Number Publication Date
JPS57197834A true JPS57197834A (en) 1982-12-04
JPS6226182B2 JPS6226182B2 (enrdf_load_stackoverflow) 1987-06-08

Family

ID=13809369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8368681A Granted JPS57197834A (en) 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate

Country Status (1)

Country Link
JP (1) JPS57197834A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
US5225235A (en) * 1987-05-18 1993-07-06 Osaka Titanium Co., Ltd. Semiconductor wafer and manufacturing method therefor
WO2023199656A1 (ja) * 2022-04-15 2023-10-19 信越半導体株式会社 ポリシリコンウェーハの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029423U (enrdf_load_stackoverflow) * 1973-07-09 1975-04-03
JPS5386775A (en) * 1976-11-08 1978-07-31 Raychem Sa Nv Thermal recovery hollow part andits using method and its making method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029423U (enrdf_load_stackoverflow) * 1973-07-09 1975-04-03
JPS5386775A (en) * 1976-11-08 1978-07-31 Raychem Sa Nv Thermal recovery hollow part andits using method and its making method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225235A (en) * 1987-05-18 1993-07-06 Osaka Titanium Co., Ltd. Semiconductor wafer and manufacturing method therefor
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
WO2023199656A1 (ja) * 2022-04-15 2023-10-19 信越半導体株式会社 ポリシリコンウェーハの製造方法
JP2023157404A (ja) * 2022-04-15 2023-10-26 信越半導体株式会社 ポリシリコンウェーハの製造方法

Also Published As

Publication number Publication date
JPS6226182B2 (enrdf_load_stackoverflow) 1987-06-08

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