JPS6223473B2 - - Google Patents
Info
- Publication number
- JPS6223473B2 JPS6223473B2 JP15883677A JP15883677A JPS6223473B2 JP S6223473 B2 JPS6223473 B2 JP S6223473B2 JP 15883677 A JP15883677 A JP 15883677A JP 15883677 A JP15883677 A JP 15883677A JP S6223473 B2 JPS6223473 B2 JP S6223473B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor layer
- fet
- conductivity type
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims 1
- 238000000605 extraction Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15883677A JPS5489582A (en) | 1977-12-27 | 1977-12-27 | Junction type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15883677A JPS5489582A (en) | 1977-12-27 | 1977-12-27 | Junction type field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5489582A JPS5489582A (en) | 1979-07-16 |
JPS6223473B2 true JPS6223473B2 (enrdf_load_stackoverflow) | 1987-05-22 |
Family
ID=15680445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15883677A Granted JPS5489582A (en) | 1977-12-27 | 1977-12-27 | Junction type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5489582A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55113378A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Semiconductor device and its manufacturing method |
JPS59193072A (ja) * | 1984-03-28 | 1984-11-01 | Sanyo Electric Co Ltd | 接合型電界効果トランジスタ |
-
1977
- 1977-12-27 JP JP15883677A patent/JPS5489582A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5489582A (en) | 1979-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7999333B2 (en) | Semiconductor device | |
JP2991489B2 (ja) | 半導体装置 | |
JPH0237114B2 (enrdf_load_stackoverflow) | ||
JPH0527267B2 (enrdf_load_stackoverflow) | ||
JPH08227900A (ja) | 半導体装置 | |
JPS6223473B2 (enrdf_load_stackoverflow) | ||
JPH098291A (ja) | 半導体装置 | |
JPH05110085A (ja) | 電界効果型半導体装置およびその製造方法 | |
JPH02862B2 (enrdf_load_stackoverflow) | ||
JP2825038B2 (ja) | 半導体装置 | |
JPS60200541A (ja) | 半導体装置 | |
US8217466B2 (en) | High-speed semiconductor device and method for manufacturing the same | |
JPS6236395B2 (enrdf_load_stackoverflow) | ||
JPH0396267A (ja) | 半導体集積回路装置 | |
JPH0590579A (ja) | パワー電界効果トランジスタ | |
JPS6155787B2 (enrdf_load_stackoverflow) | ||
JP2956181B2 (ja) | 抵抗素子を有する半導体装置 | |
JPH0473960A (ja) | 半導体集積回路 | |
US12402390B2 (en) | Method of manufacturing silicon carbide semiconductor power device | |
JPH11214511A (ja) | 半導体装置および半導体装置における配線方法 | |
JP2563456B2 (ja) | Mis型容量素子 | |
JPS6055995B2 (ja) | 接合型電界効果トランジスタ | |
JPS6228594B2 (enrdf_load_stackoverflow) | ||
JPH11312735A (ja) | 半導体装置 | |
JPS58130576A (ja) | 接合型電界効果トランジスタ |