JPS6155787B2 - - Google Patents
Info
- Publication number
- JPS6155787B2 JPS6155787B2 JP15197177A JP15197177A JPS6155787B2 JP S6155787 B2 JPS6155787 B2 JP S6155787B2 JP 15197177 A JP15197177 A JP 15197177A JP 15197177 A JP15197177 A JP 15197177A JP S6155787 B2 JPS6155787 B2 JP S6155787B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- semiconductor layer
- conductivity type
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15197177A JPS5483779A (en) | 1977-12-16 | 1977-12-16 | Junction type field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15197177A JPS5483779A (en) | 1977-12-16 | 1977-12-16 | Junction type field effect semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5483779A JPS5483779A (en) | 1979-07-04 |
| JPS6155787B2 true JPS6155787B2 (enrdf_load_stackoverflow) | 1986-11-29 |
Family
ID=15530213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15197177A Granted JPS5483779A (en) | 1977-12-16 | 1977-12-16 | Junction type field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5483779A (enrdf_load_stackoverflow) |
-
1977
- 1977-12-16 JP JP15197177A patent/JPS5483779A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5483779A (en) | 1979-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4007478A (en) | Field effect transistor | |
| JP2950558B2 (ja) | 半導体装置 | |
| US4916508A (en) | CMOS type integrated circuit and a method of producing same | |
| JP2991489B2 (ja) | 半導体装置 | |
| KR960002556A (ko) | 반도체소자 및 그 제조방법 | |
| US4145701A (en) | Semiconductor device | |
| JP3484690B2 (ja) | 縦型電界効果トランジスタ | |
| JP2713205B2 (ja) | 半導体装置 | |
| KR940004846A (ko) | 반도체장치 및 그 제조방법 | |
| JPS6155787B2 (enrdf_load_stackoverflow) | ||
| JPS5846874B2 (ja) | 接合型電界効果トランジスタ | |
| US8217466B2 (en) | High-speed semiconductor device and method for manufacturing the same | |
| JPH098291A (ja) | 半導体装置 | |
| JPS6223473B2 (enrdf_load_stackoverflow) | ||
| US12396221B2 (en) | Junction field-effect transistors | |
| US12402390B2 (en) | Method of manufacturing silicon carbide semiconductor power device | |
| JPH0251279A (ja) | 縦型電界効果トランジスタ | |
| JPS6055995B2 (ja) | 接合型電界効果トランジスタ | |
| JP2651033B2 (ja) | 二重拡散mosトランジスタ | |
| JPS6217389B2 (enrdf_load_stackoverflow) | ||
| JPH04115538A (ja) | 半導体装置 | |
| JPS58106871A (ja) | 半導体装置 | |
| JPS6054791B2 (ja) | 複合型電界効果トランジスタ | |
| JPS6224954B2 (enrdf_load_stackoverflow) | ||
| JP2678081B2 (ja) | 半導体集積回路装置 |