JPH0237114B2 - - Google Patents

Info

Publication number
JPH0237114B2
JPH0237114B2 JP54165953A JP16595379A JPH0237114B2 JP H0237114 B2 JPH0237114 B2 JP H0237114B2 JP 54165953 A JP54165953 A JP 54165953A JP 16595379 A JP16595379 A JP 16595379A JP H0237114 B2 JPH0237114 B2 JP H0237114B2
Authority
JP
Japan
Prior art keywords
conductivity type
source
electrode
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54165953A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5688363A (en
Inventor
Yoshizo Hagimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP16595379A priority Critical patent/JPS5688363A/ja
Publication of JPS5688363A publication Critical patent/JPS5688363A/ja
Publication of JPH0237114B2 publication Critical patent/JPH0237114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP16595379A 1979-12-20 1979-12-20 Field effect transistor Granted JPS5688363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16595379A JPS5688363A (en) 1979-12-20 1979-12-20 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16595379A JPS5688363A (en) 1979-12-20 1979-12-20 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS5688363A JPS5688363A (en) 1981-07-17
JPH0237114B2 true JPH0237114B2 (enrdf_load_stackoverflow) 1990-08-22

Family

ID=15822147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16595379A Granted JPS5688363A (en) 1979-12-20 1979-12-20 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5688363A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0564693U (ja) * 1992-02-03 1993-08-27 碧南特殊機械株式会社 窯業製品の乾燥台車

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111373A (ja) * 1981-12-21 1983-07-02 テキサス・インスツルメンツ・インコ−ポレイテツド Ｄ―ｍｏｓ半導体装置
JPS6076160A (ja) * 1983-10-03 1985-04-30 Seiko Epson Corp 半導体集積回路
JPS60229368A (ja) * 1984-04-27 1985-11-14 Olympus Optical Co Ltd 固体撮像装置
US4809045A (en) * 1985-09-30 1989-02-28 General Electric Company Insulated gate device
US4857977A (en) * 1987-08-24 1989-08-15 General Electric Comapny Lateral metal-oxide-semiconductor controlled triacs
JPH01140773A (ja) * 1987-11-27 1989-06-01 Hitachi Ltd 絶縁ゲート形トランジスタ
JP3307481B2 (ja) * 1993-11-05 2002-07-24 三菱電機株式会社 半導体装置
TW400560B (en) * 1996-12-23 2000-08-01 Koninkl Philips Electronics Nv Semiconductor device
TW366543B (en) * 1996-12-23 1999-08-11 Nxp Bv Semiconductor device
JP3120389B2 (ja) 1998-04-16 2000-12-25 日本電気株式会社 半導体装置
DE19828494B4 (de) 1998-06-26 2005-07-07 Robert Bosch Gmbh MOSFET-Bauelement mit Schutzvorrichtung gegen Durchschalten eines parasitären Transistors
EP1538677A1 (en) 2003-12-05 2005-06-08 STMicroelectronics S.r.l. LDMOS structure and method of making the same
EP1538678B1 (en) * 2003-12-05 2008-07-16 STMicroelectronics S.r.l. DMOS structure and method of making the same
JP5078273B2 (ja) * 2006-03-31 2012-11-21 株式会社リコー 半導体装置
JP5700649B2 (ja) * 2011-01-24 2015-04-15 旭化成エレクトロニクス株式会社 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5045574A (enrdf_load_stackoverflow) * 1973-08-24 1975-04-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0564693U (ja) * 1992-02-03 1993-08-27 碧南特殊機械株式会社 窯業製品の乾燥台車

Also Published As

Publication number Publication date
JPS5688363A (en) 1981-07-17

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