JPS5688363A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5688363A
JPS5688363A JP16595379A JP16595379A JPS5688363A JP S5688363 A JPS5688363 A JP S5688363A JP 16595379 A JP16595379 A JP 16595379A JP 16595379 A JP16595379 A JP 16595379A JP S5688363 A JPS5688363 A JP S5688363A
Authority
JP
Japan
Prior art keywords
region
substrate
regions
contacting
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16595379A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0237114B2 (enrdf_load_stackoverflow
Inventor
Yoshizo Hagimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16595379A priority Critical patent/JPS5688363A/ja
Publication of JPS5688363A publication Critical patent/JPS5688363A/ja
Publication of JPH0237114B2 publication Critical patent/JPH0237114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP16595379A 1979-12-20 1979-12-20 Field effect transistor Granted JPS5688363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16595379A JPS5688363A (en) 1979-12-20 1979-12-20 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16595379A JPS5688363A (en) 1979-12-20 1979-12-20 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS5688363A true JPS5688363A (en) 1981-07-17
JPH0237114B2 JPH0237114B2 (enrdf_load_stackoverflow) 1990-08-22

Family

ID=15822147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16595379A Granted JPS5688363A (en) 1979-12-20 1979-12-20 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5688363A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111373A (ja) * 1981-12-21 1983-07-02 テキサス・インスツルメンツ・インコ−ポレイテツド Ｄ―ｍｏｓ半導体装置
JPS6076160A (ja) * 1983-10-03 1985-04-30 Seiko Epson Corp 半導体集積回路
JPS62113477A (ja) * 1985-09-30 1987-05-25 ゼネラル・エレクトリツク・カンパニイ 絶縁ゲ−ト形半導体装置
US4677453A (en) * 1984-04-27 1987-06-30 Olympus Optical Co., Ltd. Solid state image sensor
JPH01140773A (ja) * 1987-11-27 1989-06-01 Hitachi Ltd 絶縁ゲート形トランジスタ
US4857977A (en) * 1987-08-24 1989-08-15 General Electric Comapny Lateral metal-oxide-semiconductor controlled triacs
US5763926A (en) * 1993-11-05 1998-06-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a Bi-CMOS transistor including an n-channel MOS transistor
EP0891636A1 (en) * 1996-12-23 1999-01-20 Koninklijke Philips Electronics N.V. High-voltage mos transistor device
EP0896736A1 (en) * 1996-12-23 1999-02-17 Koninklijke Philips Electronics N.V. High-voltage ldmos transistor device
US6215138B1 (en) 1998-04-16 2001-04-10 Nec Corporation Semiconductor device and its fabrication method
US6281549B1 (en) 1998-06-26 2001-08-28 Robert Bosch Gmbh MOSFET component
EP1538678A3 (en) * 2003-12-05 2005-07-27 STMicroelectronics S.r.l. LDMOS structure and method of making the same
US7166892B2 (en) 2003-12-05 2007-01-23 Stmicroelectronics S.R.L. Shrunk low on-resistance DMOS structure
JP2007273784A (ja) * 2006-03-31 2007-10-18 Ricoh Co Ltd 半導体装置
JP2012156205A (ja) * 2011-01-24 2012-08-16 Asahi Kasei Electronics Co Ltd 半導体装置、半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0564693U (ja) * 1992-02-03 1993-08-27 碧南特殊機械株式会社 窯業製品の乾燥台車

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5045574A (enrdf_load_stackoverflow) * 1973-08-24 1975-04-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5045574A (enrdf_load_stackoverflow) * 1973-08-24 1975-04-23

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111373A (ja) * 1981-12-21 1983-07-02 テキサス・インスツルメンツ・インコ−ポレイテツド Ｄ―ｍｏｓ半導体装置
JPS6076160A (ja) * 1983-10-03 1985-04-30 Seiko Epson Corp 半導体集積回路
US4677453A (en) * 1984-04-27 1987-06-30 Olympus Optical Co., Ltd. Solid state image sensor
JPS62113477A (ja) * 1985-09-30 1987-05-25 ゼネラル・エレクトリツク・カンパニイ 絶縁ゲ−ト形半導体装置
US4857977A (en) * 1987-08-24 1989-08-15 General Electric Comapny Lateral metal-oxide-semiconductor controlled triacs
JPH01140773A (ja) * 1987-11-27 1989-06-01 Hitachi Ltd 絶縁ゲート形トランジスタ
US5763926A (en) * 1993-11-05 1998-06-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a Bi-CMOS transistor including an n-channel MOS transistor
US6153915A (en) * 1993-11-05 2000-11-28 Mitsubishi Denki Kabushiki Kaisha CMOS semiconductor device
EP0896736A1 (en) * 1996-12-23 1999-02-17 Koninklijke Philips Electronics N.V. High-voltage ldmos transistor device
EP0891636A1 (en) * 1996-12-23 1999-01-20 Koninklijke Philips Electronics N.V. High-voltage mos transistor device
US6215138B1 (en) 1998-04-16 2001-04-10 Nec Corporation Semiconductor device and its fabrication method
US6281549B1 (en) 1998-06-26 2001-08-28 Robert Bosch Gmbh MOSFET component
EP1538678A3 (en) * 2003-12-05 2005-07-27 STMicroelectronics S.r.l. LDMOS structure and method of making the same
US7166892B2 (en) 2003-12-05 2007-01-23 Stmicroelectronics S.R.L. Shrunk low on-resistance DMOS structure
JP2007273784A (ja) * 2006-03-31 2007-10-18 Ricoh Co Ltd 半導体装置
WO2007119389A1 (en) * 2006-03-31 2007-10-25 Ricoh Company, Ltd. Semiconductor device
JP2012156205A (ja) * 2011-01-24 2012-08-16 Asahi Kasei Electronics Co Ltd 半導体装置、半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0237114B2 (enrdf_load_stackoverflow) 1990-08-22

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