JPS62219653A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS62219653A
JPS62219653A JP61060544A JP6054486A JPS62219653A JP S62219653 A JPS62219653 A JP S62219653A JP 61060544 A JP61060544 A JP 61060544A JP 6054486 A JP6054486 A JP 6054486A JP S62219653 A JPS62219653 A JP S62219653A
Authority
JP
Japan
Prior art keywords
resistance
polysilicon
region
wiring
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61060544A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0535578B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Ryuichi Saito
隆一 斉藤
Yasuo Sawahata
沢畠　保夫
Naohiro Monma
直弘 門馬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61060544A priority Critical patent/JPS62219653A/ja
Publication of JPS62219653A publication Critical patent/JPS62219653A/ja
Publication of JPH0535578B2 publication Critical patent/JPH0535578B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP61060544A 1986-03-20 1986-03-20 半導体装置の製造方法 Granted JPS62219653A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61060544A JPS62219653A (ja) 1986-03-20 1986-03-20 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61060544A JPS62219653A (ja) 1986-03-20 1986-03-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62219653A true JPS62219653A (ja) 1987-09-26
JPH0535578B2 JPH0535578B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-26

Family

ID=13145336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61060544A Granted JPS62219653A (ja) 1986-03-20 1986-03-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62219653A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0199261A (ja) * 1987-10-12 1989-04-18 Nec Corp 半導体装置およびその製造方法
JP2014197701A (ja) * 2008-09-25 2014-10-16 株式会社半導体エネルギー研究所 半導体装置の作製方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582458A (en) * 1978-12-18 1980-06-21 Toshiba Corp Preparation of semiconductor device
JPS59210658A (ja) * 1983-05-16 1984-11-29 Nec Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582458A (en) * 1978-12-18 1980-06-21 Toshiba Corp Preparation of semiconductor device
JPS59210658A (ja) * 1983-05-16 1984-11-29 Nec Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0199261A (ja) * 1987-10-12 1989-04-18 Nec Corp 半導体装置およびその製造方法
JP2014197701A (ja) * 2008-09-25 2014-10-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2016015512A (ja) * 2008-09-25 2016-01-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9960116B2 (en) 2008-09-25 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0535578B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-26

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