JPS6221758B2 - - Google Patents
Info
- Publication number
- JPS6221758B2 JPS6221758B2 JP12052479A JP12052479A JPS6221758B2 JP S6221758 B2 JPS6221758 B2 JP S6221758B2 JP 12052479 A JP12052479 A JP 12052479A JP 12052479 A JP12052479 A JP 12052479A JP S6221758 B2 JPS6221758 B2 JP S6221758B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gan
- growth
- hcl
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910002601 GaN Inorganic materials 0.000 claims description 32
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 32
- 239000012159 carrier gas Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 25
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 230000002159 abnormal effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010583 slow cooling Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12052479A JPS5645899A (en) | 1979-09-18 | 1979-09-18 | Vapor phase growing method for gallium nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12052479A JPS5645899A (en) | 1979-09-18 | 1979-09-18 | Vapor phase growing method for gallium nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5645899A JPS5645899A (en) | 1981-04-25 |
| JPS6221758B2 true JPS6221758B2 (enExample) | 1987-05-14 |
Family
ID=14788382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12052479A Granted JPS5645899A (en) | 1979-09-18 | 1979-09-18 | Vapor phase growing method for gallium nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5645899A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6054910A (ja) * | 1983-09-06 | 1985-03-29 | Central Glass Co Ltd | 炭化ケイ素粉末の製造方法 |
| JPH08125222A (ja) * | 1994-10-25 | 1996-05-17 | Toyoda Gosei Co Ltd | ３族窒化物半導体の製造方法 |
| JPH08264836A (ja) * | 1995-03-27 | 1996-10-11 | Sumitomo Electric Ind Ltd | 化合物半導体発光素子およびその製造方法 |
| JPH08264835A (ja) * | 1995-03-27 | 1996-10-11 | Sumitomo Electric Ind Ltd | 化合物半導体発光素子およびその製造方法 |
| JP3620105B2 (ja) * | 1995-07-27 | 2005-02-16 | 日立電線株式会社 | 窒化ガリウム結晶の製造方法 |
| JPH11209199A (ja) * | 1998-01-26 | 1999-08-03 | Sumitomo Electric Ind Ltd | ＧａＮ単結晶の合成方法 |
| JP2009177219A (ja) * | 2009-05-15 | 2009-08-06 | Mitsubishi Chemicals Corp | ＧａＮ系半導体素子の製造方法 |
-
1979
- 1979-09-18 JP JP12052479A patent/JPS5645899A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5645899A (en) | 1981-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02211620A (ja) | 化合物半導体単結晶薄膜の成長方法 | |
| JPS62188309A (ja) | 気相成長方法および装置 | |
| JPS63188938A (ja) | 窒化ガリウム系化合物半導体の気相成長方法 | |
| JP2025120484A (ja) | Ｉｉｉ族窒化物基板 | |
| JP2018058718A (ja) | Ｉｉｉ族窒化物結晶の製造方法、半導体装置およびｉｉｉ族窒化物結晶製造装置 | |
| JPS6221758B2 (enExample) | ||
| JPH0331678B2 (enExample) | ||
| JP5093740B2 (ja) | 半導体結晶膜の成長方法 | |
| JPWO2008035632A1 (ja) | ＧａＮ薄膜テンプレート基板の製造方法、ＧａＮ薄膜テンプレート基板、及びＧａＮ厚膜単結晶 | |
| TWI254465B (en) | Method of manufacturing III-V group compound semiconductor | |
| JPS59188118A (ja) | 気相エピタキシヤル結晶の製造方法 | |
| JPH033233A (ja) | 化合物半導体単結晶薄膜の成長方法 | |
| JPH0380198A (ja) | 窒素化合物半導体単結晶膜の成長方法 | |
| JPH02291114A (ja) | 化合物半導体膜の気相成長装置 | |
| JPS61291495A (ja) | 炭化珪素単結晶基板の製造方法 | |
| JPH02230720A (ja) | 化合物半導体の気相成長方法およびその装置 | |
| JPH111396A (ja) | 窒化物系化合物半導体の製造方法 | |
| US20070117356A1 (en) | Method of manufacturing single crystalline gallium nitride thick film | |
| KR950032727A (ko) | 갈륨 나이트라이드 단결정 박막의 제조방법과 그 제조장치 | |
| JP3006776B2 (ja) | 気相成長方法 | |
| JPH01215014A (ja) | 半導体結晶の成長方法 | |
| KR102086725B1 (ko) | 질화물 반도체 프리스탠딩 기판과 그 제조 장치 및 방법 | |
| CN117059478A (zh) | GaN基板的制备方法、GaN基板及其外延生长方法 | |
| JPH01179788A (ja) | Ｓｉ基板上への３−５族化合物半導体結晶の成長方法 | |
| JP2753832B2 (ja) | 第▲ｉｉｉ▼・ｖ族化合物半導体の気相成長法 |