JPS6221557U - - Google Patents
Info
- Publication number
- JPS6221557U JPS6221557U JP11234685U JP11234685U JPS6221557U JP S6221557 U JPS6221557 U JP S6221557U JP 11234685 U JP11234685 U JP 11234685U JP 11234685 U JP11234685 U JP 11234685U JP S6221557 U JPS6221557 U JP S6221557U
- Authority
- JP
- Japan
- Prior art keywords
- channel
- region
- source
- conductivity type
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Description
第１図は本考案の基本的な構造図、第２図、第
３図、第４図は本考案の原因となつたキンク効果
の説明図、第５図は本考案の実施例の説明図であ
る。 １……衝突電離の発生領域、２……ゲート、３
……絶縁物、４……反転層、５……コンタクト、
６……電極、７……分離領域、８……石英、９…
…多結晶Ｓｉ。
３図、第４図は本考案の原因となつたキンク効果
の説明図、第５図は本考案の実施例の説明図であ
る。 １……衝突電離の発生領域、２……ゲート、３
……絶縁物、４……反転層、５……コンタクト、
６……電極、７……分離領域、８……石英、９…
…多結晶Ｓｉ。
Claims (1)
- 絶縁物または絶縁膜上の半導体を使用し作製し
たＭＯＳＦＥＴにおいて、ソースあるいはドレイ
ンのいずれか一方のチヤネルから続く両端又は片
端領域をチヤネルと同じ電導形とし、この領域と
この領域と接するソース又はドレインとを同一電
極により配線したことを特徴とする半導体装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11234685U JPS6221557U (ja) | 1985-07-24 | 1985-07-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11234685U JPS6221557U (ja) | 1985-07-24 | 1985-07-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6221557U true JPS6221557U (ja) | 1987-02-09 |
Family
ID=30993133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11234685U Pending JPS6221557U (ja) | 1985-07-24 | 1985-07-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6221557U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63278273A (ja) * | 1987-04-23 | 1988-11-15 | Agency Of Ind Science & Technol | 半導体装置 |
-
1985
- 1985-07-24 JP JP11234685U patent/JPS6221557U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63278273A (ja) * | 1987-04-23 | 1988-11-15 | Agency Of Ind Science & Technol | 半導体装置 |
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