JPS62206816A - 半導体結晶層の製造方法 - Google Patents

半導体結晶層の製造方法

Info

Publication number
JPS62206816A
JPS62206816A JP61048468A JP4846886A JPS62206816A JP S62206816 A JPS62206816 A JP S62206816A JP 61048468 A JP61048468 A JP 61048468A JP 4846886 A JP4846886 A JP 4846886A JP S62206816 A JPS62206816 A JP S62206816A
Authority
JP
Japan
Prior art keywords
layer
forming
semiconductor
film
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61048468A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476490B2 (enExample
Inventor
Tadashi Nishimura
正 西村
Yasuaki Inoue
靖朗 井上
Kazuyuki Sugahara
和之 須賀原
Shigeru Kusunoki
茂 楠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61048468A priority Critical patent/JPS62206816A/ja
Priority to EP87103147A priority patent/EP0236953B1/en
Priority to DE8787103147T priority patent/DE3780327T2/de
Priority to US07/022,402 priority patent/US4861418A/en
Publication of JPS62206816A publication Critical patent/JPS62206816A/ja
Publication of JPH0476490B2 publication Critical patent/JPH0476490B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1912—Preparing SOI wafers using selective deposition, e.g. epitaxial lateral overgrowth [ELO] or selective deposition of single crystal silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam

Landscapes

  • Recrystallisation Techniques (AREA)
JP61048468A 1986-03-07 1986-03-07 半導体結晶層の製造方法 Granted JPS62206816A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61048468A JPS62206816A (ja) 1986-03-07 1986-03-07 半導体結晶層の製造方法
EP87103147A EP0236953B1 (en) 1986-03-07 1987-03-05 Method of manufacturing semiconductor crystalline layer
DE8787103147T DE3780327T2 (de) 1986-03-07 1987-03-05 Herstellungsverfahren einer halbleiter-kristallschicht.
US07/022,402 US4861418A (en) 1986-03-07 1987-03-06 Method of manufacturing semiconductor crystalline layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61048468A JPS62206816A (ja) 1986-03-07 1986-03-07 半導体結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS62206816A true JPS62206816A (ja) 1987-09-11
JPH0476490B2 JPH0476490B2 (enExample) 1992-12-03

Family

ID=12804203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61048468A Granted JPS62206816A (ja) 1986-03-07 1986-03-07 半導体結晶層の製造方法

Country Status (4)

Country Link
US (1) US4861418A (enExample)
EP (1) EP0236953B1 (enExample)
JP (1) JPS62206816A (enExample)
DE (1) DE3780327T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032924A (ja) * 2004-06-14 2006-02-02 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01162376A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置の製造方法
JP2980920B2 (ja) * 1989-08-03 1999-11-22 日本エービーエス株式会社 車両用液圧ブレーキ制御装置
EP0456199B1 (en) * 1990-05-11 1997-08-27 Asahi Glass Company Ltd. Process for preparing a polycrystalline semiconductor thin film transistor
US5155559A (en) * 1991-07-25 1992-10-13 North Carolina State University High temperature refractory silicide rectifying contact
DE4128333A1 (de) * 1991-08-27 1993-03-04 Fischer Armin Verfahren zum gettern von soi-schichten
JP3453436B2 (ja) * 1994-09-08 2003-10-06 三菱電機株式会社 半導体層を溶融再結晶化するための装置
US5893948A (en) * 1996-04-05 1999-04-13 Xerox Corporation Method for forming single silicon crystals using nucleation sites
US6066571A (en) * 1997-01-10 2000-05-23 Kabushiki Kaisha Toshiba Method of preparing semiconductor surface
TWI253179B (en) * 2002-09-18 2006-04-11 Sanyo Electric Co Method for making a semiconductor device
WO2004102647A1 (ja) * 2003-05-14 2004-11-25 Fujitsu Limited 半導体薄膜の結晶化方法
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
US8348720B1 (en) 2007-06-19 2013-01-08 Rubicon Technology, Inc. Ultra-flat, high throughput wafer lapping process

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371421A (en) * 1981-04-16 1983-02-01 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
US4494300A (en) * 1981-06-30 1985-01-22 International Business Machines, Inc. Process for forming transistors using silicon ribbons as substrates
JPS5893221A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体薄膜構造とその製造方法
JPS58130517A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 単結晶薄膜の製造方法
US4479846A (en) * 1982-06-23 1984-10-30 Massachusetts Institute Of Technology Method of entraining dislocations and other crystalline defects in heated film contacting patterned region
JPS5945996A (ja) * 1982-09-03 1984-03-15 Nec Corp 半導体の気相成長方法
JPS59108313A (ja) * 1982-12-13 1984-06-22 Mitsubishi Electric Corp 半導体単結晶層の製造方法
US4592799A (en) * 1983-05-09 1986-06-03 Sony Corporation Method of recrystallizing a polycrystalline, amorphous or small grain material
US4545823A (en) * 1983-11-14 1985-10-08 Hewlett-Packard Company Grain boundary confinement in silicon-on-insulator films
US4564403A (en) * 1984-01-27 1986-01-14 Sony Corporation Research Center Single-crystal semiconductor devices and method for making them
US4590130A (en) * 1984-03-26 1986-05-20 General Electric Company Solid state zone recrystallization of semiconductor material on an insulator
EP0227076B1 (en) * 1985-12-20 1992-06-17 Agency Of Industrial Science And Technology Method of manufacturing monocrystal thin-film
JPS62160712A (ja) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol 半導体装置の製造方法
DE3779672T2 (de) * 1986-03-07 1993-01-28 Iizuka Kozo Verfahren zum herstellen einer monokristallinen halbleiterschicht.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032924A (ja) * 2004-06-14 2006-02-02 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Also Published As

Publication number Publication date
EP0236953B1 (en) 1992-07-15
US4861418A (en) 1989-08-29
EP0236953A2 (en) 1987-09-16
DE3780327D1 (de) 1992-08-20
JPH0476490B2 (enExample) 1992-12-03
DE3780327T2 (de) 1993-03-11
EP0236953A3 (en) 1989-07-26

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