JPS62205319A - 強誘電性液晶素子 - Google Patents

強誘電性液晶素子

Info

Publication number
JPS62205319A
JPS62205319A JP4734086A JP4734086A JPS62205319A JP S62205319 A JPS62205319 A JP S62205319A JP 4734086 A JP4734086 A JP 4734086A JP 4734086 A JP4734086 A JP 4734086A JP S62205319 A JPS62205319 A JP S62205319A
Authority
JP
Japan
Prior art keywords
substrate
electrode
liquid crystal
auxiliary electrode
ferroelectric liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4734086A
Other languages
English (en)
Other versions
JPH0668589B2 (ja
Inventor
Akira Tsuboyama
明 坪山
Osamu Taniguchi
修 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP4734086A priority Critical patent/JPH0668589B2/ja
Publication of JPS62205319A publication Critical patent/JPS62205319A/ja
Publication of JPH0668589B2 publication Critical patent/JPH0668589B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • G02F1/13394Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は液晶表示素子や液晶−光シヤツター等に用いら
れる液晶素子に関し、詳しくは強誘電性液晶を用いた液
晶素子に関するものである。
[開示の概要] 本明細書及び図面は、強誘電性液晶を用いた液晶素子に
おいて、ストライプ状の電極に沿って接した金属フィル
ムで形成した補助電極をスペーサーで被覆することによ
り、補助電極の段差にょる配向欠陥をなくすことができ
るようにしたものである。
[従来の技術] 近年、強誘電性液晶素子は、その高速応答性とメモリー
性から高精細大型ディスプレイへの応用が考えられてい
る。このような液晶素子の構成としては、交差した走査
電極群と信号電極群の交差部を画素とする単純マトリク
ス構造が一般に用いられている。この構造は高精細にな
ると電極の幅が狭くなり、電極の1ラインあたりの抵抗
値が高くなるため、1ライン中で電圧値にばらつきが生
じ、駆動に必要な電圧が各画素に上のに印加されないこ
とがあった。そこでこの欠点を解決するため、透明電極
に金属補助配線を設けることが行なわれている。この配
線を設けることにより抵抗値は下がり、電圧のばらつき
は少なくなる。
[発明が解決しようとする問題点] 現在、強誘電性液晶で最も実用性が高いものは、カイラ
ルスメクティック相を持つものである。しかしながら、
この液晶相は基板との界面に段差があると配向欠陥を生
じ、均一なモノドメインが得られなかった。したがって
、前述したように金属補助線を設けると基板上に段差を
生じ、均一なモノドメインとならず適正な駆動特性が得
られないという欠点があった。
本発明は、」−記従来例の欠点を除去し、適正な駆動特
性を得ることのできる強誘電性液晶素子を提供すること
を目的とするものである。
[問題点を解決するための手段] 上記問題点を解決するための手段を、実施例に対応する
第1図を用いて説明すると、本発明は一対の基板1,2
間に強誘電性液晶8を挟持し、互いに交差する走査電極
i¥3と信号電極群4を設けたマトリクス構造の液晶素
子であって、前記走査電極群3と信号電極群4のうち少
なくとも一方が、該電極の長手方向に沿って接した金属
膜で形成した補助電極5を有し、一方の補助電極がセル
厚(平行基板間の間隔)を保持するためのストライプ状
状のスペーサー7に被覆されていることを特徴とする強
誘電性液晶素子である。
[作 用] ストライプ状の駆動電極に沿って設けられた補助電極は
、同じ方向に形成されるストライプ状のスペーサーによ
って覆われるため、補助電極による段差は除去される。
この場合、基板表面の配向処理はストライプの方向と直
交する方向に施されるが、前述したように基板上の段差
が除去されているため、界面での配向欠陥を防止するこ
とができる。一方、対向する側の基板においては、駆動
電極と補助電極のストライプの方向と同じ方向に配向処
理が施される。すなわち、液晶分子の配向方向と直交す
る方向においては段差を有するが、平行方向の段差はな
い。この平行方向における段差の場合、液晶分子の配向
欠陥を生じる割合が非常に少ないため、配向方向と直交
する基板上の補助電極だけをスペーサーで覆うことによ
り、上下基板の界面から良好なモノドメイン構造を形成
させることができる。
[実施例] 本発明の一実施例を第1図及び第2図と共に説明する。
第1図は第2図のx−x ’断面に相当する素子の部分
断面図、第2図は素子の平面図である。図において、ガ
ラス基板2はストライプ状の信号電極群4と、この信号
電極群4の一端に^ρ(アルミニウム)膜で形成した補
助電極5を有し、基板表面には一様にポリイミド被膜6
が形成されている。このガラス基板2には、さらにセル
厚を保持するためのスペーサー7が補助電極5を覆うよ
うに形成されている。一方、ガラス基板lも同様にして
ストライプ状の走査電極群3.補助電極5(図示せず)
、ポリイミド被膜6が形成されている。この2枚の基板
は、上下の電極群が互いに交差するよう配置され、内部
には強誘電性液晶8が充填されている。
次に、この素子の具体的な作成例について述べる。
まず、ガラス基板2の全面にEB蒸着によりITO(I
ndium−Tin−0!1de)層1000Aを形成
し、100 p、mピッチで80JLm幅のストライプ
電極をフォトレジストによりパターニングして信号電極
群4とした。次に補助電極5を形成するため、全面にA
I!を蒸着後、フォトレジストにより信号電極端上に層
厚100(IA 、 @ 5 /7.mでパターニング
を行った。次に、これらの電極上にポリイミド被膜+3
00 Aをスピナーにより塗布した。このポリイミド被
膜6には、日立化成社製PIQ  (商品名)を用い、
250℃で1時間焼成した。
次に補助電極5上にストライプ状スペーサーを形成する
ため、前記ポリイミド被膜6上に1.5 Ji、mでポ
リイミドを全面に塗布し、フォトレジストによりパター
ニングして幅15gn+ 、層厚2Ii、Illのスペ
ーサー7を形成した。このスペーサーにより補助電極5
による段差は解消され、ガラス基板2の液晶の接する基
板面に急激な段差はない。
一方、対向するガラス基板1の作成工程は、スペーサー
7を形成しないこと以外は前記ガラス基板2の場合と同
様である。
このガラス基板1には前記スペーサー7が形成されてい
ないため、基板上には補助電極5による段差がある。し
かしながら、本発明者らは一軸性配向処理方向に液晶層
厚の段差がある場合、特にスメクチック相を有する強誘
電性液晶においては配向欠陥を生じる割合が非常に小さ
いことを見いだした。
したがってガラス基板lのポリイミド被膜6の膜厚をや
や厚めの150OAに設定して平行方向の段差をある程
度緩和するとともに、配向処理の方向を基板上のストラ
イプ電極方向と平行とすることにより、界面において欠
陥のない良好なモノドメインを得ることができる。配向
処理はラビング法を用い、前述したようにガラス基板1
はストライプ電極と平行にガラス基板2はストライプ電
極と垂直にそれぞれラビング処理を施した。
このようにして得られた基板を、電極群が互いに直交す
るよう貼り合わせて液晶セルを形成した。
実施例1 このようにして作成された液晶セルに、以下に示す3成
分からなる強誘電性液晶を封入した。
偏光顕微鏡による相観察から、上記3成分混合液晶のS
mC”相(カイラルスメクティックC相)の温度範囲は
4〜35°Cであった。この3成分混合液晶を前記液晶
セルに封入、封止後、等方相まで昇温し、0.5℃ハで
徐冷することにより配向処理を行った。この液晶セルを
直交ニコルに設定した偏光顕微鏡で観察すると、配向欠
陥の非常に少ない千ノドメインの形成が確認された。
さらに、このセルの基板端から導線を引き出し、各画素
にパルス電圧印加したところ、1 m5ecで±15V
の電圧で反転し、第1と第2の安定状態を持つ双安定性
を示した。
このように、各画素は一定電圧で一様に反転し、1ライ
ン中での電圧のばらつきが実用上ないことが確認された
実施例2 液晶材料として以下に示すDOBAMBCψH3 を封入し、それ、以外はすべて前記実施例1と同様の実
験を行ったところ、十分均一なモノドメイン配向を得る
ことができた。また、反転に必要な駆動電圧はl m5
ecで±18Vであり、前記実施例1と同様に良好な駆
動特性が得られた。
本発明で用いるスペーサー7としては、前述の実施例で
用いたポリイミドの他に、感光性ポリイミド、感光性ポ
リアミド、フォトレジスト材、ポリアミド、フェノール
樹脂等を用いることができる。また、補助電極5として
は、AIlの他にOr(クロム)、Ag(銀)、Cu(
銅)などが使用できる。
[発明の効果] 以上説明したように、本発明によれば補助電極の段差に
よる配向欠陥をなくし、基板との界面において均一なモ
ノドメインを得ることができる。
したがって強誘電性液晶を用いた場合でも適正な駆動特
性を得ることができる。
【図面の簡単な説明】
第1図は実施例を示す部分断面図、第2図は実施例を示
す平面図である。 1.2・・・ガラス基板、3・・・走査電極群、4・・
・信号電極群、5・・・補助電極、6・・・ポリイミド
被膜、7・・・スペーサー、8・・・強誘電性液晶。

Claims (1)

  1. 【特許請求の範囲】 1)一対の基板間に強誘電性液晶を挟持し、互いに交差
    する走査電極と信号電極を設けたマトリクス構造の液晶
    素子であって、前記走査電極と信号電極のうち少なくと
    も一方が該電極の長手方向に沿って接した金属フィルム
    で形成した補助電極を有し、該補助電極がセル厚を保持
    するためのストライプ状のスペーサーに被覆されている
    ことを特徴とする強誘電性液晶素子。 2)前記強誘電性液晶がスメクティック相であることを
    特徴とする特許請求の範囲第1項に記載の強誘電性液晶
    素子。
JP4734086A 1986-03-06 1986-03-06 強誘電性液晶素子 Expired - Fee Related JPH0668589B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4734086A JPH0668589B2 (ja) 1986-03-06 1986-03-06 強誘電性液晶素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4734086A JPH0668589B2 (ja) 1986-03-06 1986-03-06 強誘電性液晶素子

Publications (2)

Publication Number Publication Date
JPS62205319A true JPS62205319A (ja) 1987-09-09
JPH0668589B2 JPH0668589B2 (ja) 1994-08-31

Family

ID=12772454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4734086A Expired - Fee Related JPH0668589B2 (ja) 1986-03-06 1986-03-06 強誘電性液晶素子

Country Status (1)

Country Link
JP (1) JPH0668589B2 (ja)

Cited By (134)

* Cited by examiner, † Cited by third party
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EP0740184A2 (en) * 1995-04-28 1996-10-30 Canon Kabushiki Kaisha Liquid crystal device, process for producing same and liquid crystal apparatus
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