JPS6218990B2 - - Google Patents

Info

Publication number
JPS6218990B2
JPS6218990B2 JP55170070A JP17007080A JPS6218990B2 JP S6218990 B2 JPS6218990 B2 JP S6218990B2 JP 55170070 A JP55170070 A JP 55170070A JP 17007080 A JP17007080 A JP 17007080A JP S6218990 B2 JPS6218990 B2 JP S6218990B2
Authority
JP
Japan
Prior art keywords
potential
signal
circuit
shot
equalization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55170070A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5794982A (en
Inventor
Shigetaka Sueyoshi
Kazuo Tokushige
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP55170070A priority Critical patent/JPS5794982A/ja
Publication of JPS5794982A publication Critical patent/JPS5794982A/ja
Publication of JPS6218990B2 publication Critical patent/JPS6218990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/18Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
JP55170070A 1980-12-02 1980-12-02 Memory circuit Granted JPS5794982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170070A JPS5794982A (en) 1980-12-02 1980-12-02 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170070A JPS5794982A (en) 1980-12-02 1980-12-02 Memory circuit

Publications (2)

Publication Number Publication Date
JPS5794982A JPS5794982A (en) 1982-06-12
JPS6218990B2 true JPS6218990B2 (enrdf_load_stackoverflow) 1987-04-25

Family

ID=15898071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170070A Granted JPS5794982A (en) 1980-12-02 1980-12-02 Memory circuit

Country Status (1)

Country Link
JP (1) JPS5794982A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11777226B2 (en) 2019-11-27 2023-10-03 Mitsubishi Electric Corporation Reflector antenna device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110091A (ja) * 1982-12-14 1984-06-25 Nec Corp 出力回路
JPH0715798B2 (ja) * 1983-02-23 1995-02-22 株式会社東芝 半導体記憶装置
US4633102A (en) * 1984-07-09 1986-12-30 Texas Instruments Incorporated High speed address transition detector circuit for dynamic read/write memory
JPS63173296A (ja) * 1987-01-12 1988-07-16 Sony Corp メモリ装置のプルアツプ回路
JPH07118196B2 (ja) * 1988-12-28 1995-12-18 株式会社東芝 スタティック型半導体メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11777226B2 (en) 2019-11-27 2023-10-03 Mitsubishi Electric Corporation Reflector antenna device

Also Published As

Publication number Publication date
JPS5794982A (en) 1982-06-12

Similar Documents

Publication Publication Date Title
US5694369A (en) Semiconductor memory device
EP0558079B1 (en) Semiconductor memory device with address transition detector
JP2569538B2 (ja) メモリ装置
JPH0612632B2 (ja) メモリ回路
KR920006976A (ko) 반도체 메모리 장치
JP2894115B2 (ja) カラム選択回路
JPH0256757B2 (enrdf_load_stackoverflow)
JPH0241109B2 (enrdf_load_stackoverflow)
US4112512A (en) Semiconductor memory read/write access circuit and method
KR100197204B1 (ko) 직류증폭이득의 설계 자유도가 높은 상보차동증폭기 및 그것을 사용한 반도체메모리장치
JPH0766665B2 (ja) 半導体記憶装置
US7558125B2 (en) Input buffer and method with AC positive feedback, and a memory device and computer system using same
US5883846A (en) Latch type sense amplifier having a negative feedback device
JPS6223392B2 (enrdf_load_stackoverflow)
EP0329177B1 (en) Semiconductor memory device which can suppress operation error due to power supply noise
JPS6218990B2 (enrdf_load_stackoverflow)
JPS6224875B2 (enrdf_load_stackoverflow)
JPH0421277B2 (enrdf_load_stackoverflow)
JPH0883491A (ja) データ読出回路
US5648932A (en) Output control circuit for semiconductor memory
JPH0660665A (ja) 半導体スタティックramのビット線負荷回路
KR100242516B1 (ko) 결합으로 인한 판독 버스의 전위 변동을 방지하기 위한 기능을 가진 반도체 메모리 디바이스
JPS639319B2 (enrdf_load_stackoverflow)
JPH0325878B2 (enrdf_load_stackoverflow)
JPH1031888A (ja) 半導体メモリ回路