JPS6216014B2 - - Google Patents

Info

Publication number
JPS6216014B2
JPS6216014B2 JP53161422A JP16142278A JPS6216014B2 JP S6216014 B2 JPS6216014 B2 JP S6216014B2 JP 53161422 A JP53161422 A JP 53161422A JP 16142278 A JP16142278 A JP 16142278A JP S6216014 B2 JPS6216014 B2 JP S6216014B2
Authority
JP
Japan
Prior art keywords
heat treatment
semiconductor substrate
semiconductor
substrate
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53161422A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5587446A (en
Inventor
Kunihiko Hara
Yukio Tsuzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP16142278A priority Critical patent/JPS5587446A/ja
Publication of JPS5587446A publication Critical patent/JPS5587446A/ja
Publication of JPS6216014B2 publication Critical patent/JPS6216014B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP16142278A 1978-12-25 1978-12-25 Manufacture of semiconductor device Granted JPS5587446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16142278A JPS5587446A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16142278A JPS5587446A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5587446A JPS5587446A (en) 1980-07-02
JPS6216014B2 true JPS6216014B2 (enrdf_load_stackoverflow) 1987-04-10

Family

ID=15734792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16142278A Granted JPS5587446A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587446A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04119711U (ja) * 1991-04-10 1992-10-27 しげる工業株式会社 自動車における香り放出装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62204524A (ja) * 1986-03-04 1987-09-09 Nec Corp 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146882A (en) * 1974-10-18 1976-04-21 Mitsubishi Electric Corp Handotaisochi oyobisono seizohoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04119711U (ja) * 1991-04-10 1992-10-27 しげる工業株式会社 自動車における香り放出装置

Also Published As

Publication number Publication date
JPS5587446A (en) 1980-07-02

Similar Documents

Publication Publication Date Title
US3747203A (en) Methods of manufacturing a semiconductor device
JPH0727965B2 (ja) 埋込みＳｉＯ▲下２▼層を含む装置の製造方法
JPH03129832A (ja) アニーリング
US3607449A (en) Method of forming a junction by ion implantation
JPS6025894B2 (ja) イオン打込みを用いた半導体装置の製造方法
US3925106A (en) Ion bombardment method of producing integrated semiconductor circuit resistors of low temperature coefficient of resistance
US3730778A (en) Methods of manufacturing a semiconductor device
JPS59920A (ja) 半導体装置の製造方法
JPS6066814A (ja) 半導体デバイスの製造方法
JPH05102072A (ja) ケイ化物層からなる半導体デバイスおよびそのデバイスの製造方法
US3513035A (en) Semiconductor device process for reducing surface recombination velocity
JPS60501927A (ja) 浅い接合の半導体デバイス
JPS61274386A (ja) ３−５半導体デバイスを製造する方法
US3929512A (en) Semiconductor devices
JP3165051B2 (ja) 半導体素子のウェル形成方法
JPS6216014B2 (enrdf_load_stackoverflow)
JPH09260639A (ja) シリコン半導体装置の製造方法
US3580745A (en) Semiconductor device
JPS6227727B2 (enrdf_load_stackoverflow)
JPH0334649B2 (enrdf_load_stackoverflow)
US3704178A (en) Process for forming a p-n junction in a semiconductor material
JPS6119103B2 (enrdf_load_stackoverflow)
JP3450163B2 (ja) 半導体装置の製造方法
JP3035941B2 (ja) ▲ｉｉｉ▼―▲ｖ▼族化合物半導体装置の製造方法
JP2664416B2 (ja) 半導体装置の製造方法