JPS6119103B2 - - Google Patents
Info
- Publication number
- JPS6119103B2 JPS6119103B2 JP54140596A JP14059679A JPS6119103B2 JP S6119103 B2 JPS6119103 B2 JP S6119103B2 JP 54140596 A JP54140596 A JP 54140596A JP 14059679 A JP14059679 A JP 14059679A JP S6119103 B2 JPS6119103 B2 JP S6119103B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- semiconductor substrate
- sputtering
- substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14059679A JPS5664444A (en) | 1979-10-31 | 1979-10-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14059679A JPS5664444A (en) | 1979-10-31 | 1979-10-31 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5664444A JPS5664444A (en) | 1981-06-01 |
JPS6119103B2 true JPS6119103B2 (enrdf_load_stackoverflow) | 1986-05-15 |
Family
ID=15272366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14059679A Granted JPS5664444A (en) | 1979-10-31 | 1979-10-31 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5664444A (enrdf_load_stackoverflow) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5433920A (en) * | 1977-08-19 | 1979-03-13 | Sharp Corp | Carburetor |
-
1979
- 1979-10-31 JP JP14059679A patent/JPS5664444A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5664444A (en) | 1981-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3747203A (en) | Methods of manufacturing a semiconductor device | |
US3390019A (en) | Method of making a semiconductor by ionic bombardment | |
US5219773A (en) | Method of making reoxidized nitrided oxide MOSFETs | |
JPS6066814A (ja) | 半導体デバイスの製造方法 | |
US4151011A (en) | Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure | |
JPH05102072A (ja) | ケイ化物層からなる半導体デバイスおよびそのデバイスの製造方法 | |
JP3145851B2 (ja) | 半導体基板及び半導体装置 | |
US3513035A (en) | Semiconductor device process for reducing surface recombination velocity | |
JP3165051B2 (ja) | 半導体素子のウェル形成方法 | |
JPS58197825A (ja) | 半導体保護層形成方法 | |
JPS6119103B2 (enrdf_load_stackoverflow) | ||
JPS6216014B2 (enrdf_load_stackoverflow) | ||
JPH03131020A (ja) | 半導体装置の製造方法 | |
JPS582067A (ja) | 半導体装置の製造方法 | |
US4003759A (en) | Ion implantation of gold in mercury cadmium telluride | |
JPH01303727A (ja) | 不純物ゲッタリング方法 | |
JP3035941B2 (ja) | ▲iii▼―▲v▼族化合物半導体装置の製造方法 | |
JPS60149125A (ja) | 半導体基板への不純物添加方法 | |
JPS6142911A (ja) | イオン注入による導電層形成方法 | |
JPS6030112B2 (ja) | トランジスタの製造方法 | |
Boch et al. | Impact of mechanical stress on total-dose effects in bipolar ICs | |
JPS60733A (ja) | 半導体装置とその製造方法 | |
JPH0936381A (ja) | シリコンオンサファイア集積回路構成体 | |
JPH01108781A (ja) | 半導体放射検出器の製造方法 | |
JPS6132433A (ja) | 半導体装置の製造方法 |