JPS5664444A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5664444A JPS5664444A JP14059679A JP14059679A JPS5664444A JP S5664444 A JPS5664444 A JP S5664444A JP 14059679 A JP14059679 A JP 14059679A JP 14059679 A JP14059679 A JP 14059679A JP S5664444 A JPS5664444 A JP S5664444A
- Authority
- JP
- Japan
- Prior art keywords
- treated
- stable
- 60min
- approx
- quasi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 238000011221 initial treatment Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000005865 ionizing radiation Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a semiconductor device having preferable characteristics by forming a thin film on an active element region, heat treating it, then irradiating predetermined amounts of charged particle beam, ionizing radiation and electromagnetic wave thereto and again heat treating it at a predetermined temperature. CONSTITUTION:After a predetermined amount of impurity diffused layer is formed, a wiring aluminum 6 is evaporated by an electron beam evaporating process, is then heat treated, thereby conducting an ohmic contact therebetween. Subsequently, an SiO2 film 7 is formed by sputtering, and is selectively opened with windows 8. Successively, it is heat treated at 400-550 deg.C for approx. 60min, and an X-rays are then irradiated in the amount of 20-20mrad in integration using a W bulb. Eventually, it is treated at 300-500 deg.C for approx. 60min. According to this configuration unstable residual defect can be converted into quasi-stable state by the initial treatment, the stable and quasi-stable defects can be simultaneously and uniformly dispersed by the irradiation of the X-rays, thereafter it is treated at low temperature causing no thermal inductive defect, thereby conducting rearray of lattice on the surface and in the boundary thereof. Accordingly, its electric characteristics can be remarkably improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14059679A JPS5664444A (en) | 1979-10-31 | 1979-10-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14059679A JPS5664444A (en) | 1979-10-31 | 1979-10-31 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5664444A true JPS5664444A (en) | 1981-06-01 |
| JPS6119103B2 JPS6119103B2 (en) | 1986-05-15 |
Family
ID=15272366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14059679A Granted JPS5664444A (en) | 1979-10-31 | 1979-10-31 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5664444A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5433920A (en) * | 1977-08-19 | 1979-03-13 | Sharp Corp | Carburetor |
-
1979
- 1979-10-31 JP JP14059679A patent/JPS5664444A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5433920A (en) * | 1977-08-19 | 1979-03-13 | Sharp Corp | Carburetor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6119103B2 (en) | 1986-05-15 |
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