JPS6215961B2 - - Google Patents
Info
- Publication number
- JPS6215961B2 JPS6215961B2 JP53035634A JP3563478A JPS6215961B2 JP S6215961 B2 JPS6215961 B2 JP S6215961B2 JP 53035634 A JP53035634 A JP 53035634A JP 3563478 A JP3563478 A JP 3563478A JP S6215961 B2 JPS6215961 B2 JP S6215961B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent conductive
- gas
- sputtering
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000008685 targeting Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 30
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 9
- 229910001882 dioxygen Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
Landscapes
- Conductive Materials (AREA)
- Manufacturing Of Electric Cables (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3563478A JPS54127598A (en) | 1978-03-27 | 1978-03-27 | Process for fabricating transparent conductive film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3563478A JPS54127598A (en) | 1978-03-27 | 1978-03-27 | Process for fabricating transparent conductive film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54127598A JPS54127598A (en) | 1979-10-03 |
JPS6215961B2 true JPS6215961B2 (enrdf_load_stackoverflow) | 1987-04-10 |
Family
ID=12447296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3563478A Granted JPS54127598A (en) | 1978-03-27 | 1978-03-27 | Process for fabricating transparent conductive film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54127598A (enrdf_load_stackoverflow) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209009A (ja) * | 1982-05-28 | 1983-12-05 | 株式会社日立製作所 | 透明導電膜の形成方法 |
JPS62190612A (ja) * | 1986-02-17 | 1987-08-20 | 株式会社半導体エネルギー研究所 | 酸化亜鉛導電膜の作製方法 |
US6975296B1 (en) | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
GB0006801D0 (en) * | 2000-03-22 | 2000-05-10 | Pilkington Plc | Coating glass |
DE10023459A1 (de) * | 2000-05-12 | 2001-11-15 | Balzers Process Systems Gmbh | Indium-Zinn-Oxid (ITO)-Schicht und Verfahren zur Herstellung derselben |
JP2011091063A (ja) * | 2011-02-09 | 2011-05-06 | Inst Of Materials Research & Engineering | Oledデバイスの性能を向上させるための改善された透明電極材料 |
-
1978
- 1978-03-27 JP JP3563478A patent/JPS54127598A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS54127598A (en) | 1979-10-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5045235A (en) | Transparent conductive film | |
JP3970719B2 (ja) | 二酸化チタンを基礎とするスパッタターゲット | |
US20050115828A1 (en) | Non-stoichiometric niox ceramic target | |
JPH02168507A (ja) | フッ素ドープ酸化錫膜及びその低抵抗化方法 | |
JPS6215961B2 (enrdf_load_stackoverflow) | ||
EP0159531B1 (en) | Thin film el panel | |
JPH0344465A (ja) | Ito透明導電膜用スパッタリングターゲットの製造方法 | |
JPH1088332A (ja) | スパッタリングターゲットおよび透明導電膜とその製造方法 | |
JPH0371510A (ja) | 透明導電膜 | |
JP2000281346A (ja) | 紫外光透明電気伝導体 | |
US4605285A (en) | Electrochromic device | |
JPH0343911A (ja) | 透明導電膜 | |
JP3355610B2 (ja) | スズドープ酸化インジウム膜の高抵抗化方法 | |
JP4079457B2 (ja) | インジウム−スズ酸化物膜の高抵抗化方法 | |
JPH06293957A (ja) | 高抵抗化酸化インジウム膜 | |
JPH01283369A (ja) | Ito透明導電膜形成用スパッタリングターゲット | |
JPS647445B2 (enrdf_load_stackoverflow) | ||
JPH04341707A (ja) | 透明導電膜 | |
JPS62227082A (ja) | 透明導電膜の形成方法 | |
JPH0765167B2 (ja) | Ito透明導電膜用スパッタリングターゲット | |
JP3197623B2 (ja) | 透明導電性薄膜の形成方法 | |
JP2941086B2 (ja) | 透明電極 | |
JPS6380413A (ja) | 透明導電体 | |
JPH07224374A (ja) | スズドープ酸化インジウム膜の高抵抗化方法 | |
KR880000448B1 (ko) | 투명 도전막 형성법 |