JPS62158352A - Resin sealed semiconductor device - Google Patents

Resin sealed semiconductor device

Info

Publication number
JPS62158352A
JPS62158352A JP96586A JP96586A JPS62158352A JP S62158352 A JPS62158352 A JP S62158352A JP 96586 A JP96586 A JP 96586A JP 96586 A JP96586 A JP 96586A JP S62158352 A JPS62158352 A JP S62158352A
Authority
JP
Japan
Prior art keywords
resin
leads
semiconductor device
semiconductor element
sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP96586A
Other languages
Japanese (ja)
Inventor
Yuji Matsui
祐司 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP96586A priority Critical patent/JPS62158352A/en
Publication of JPS62158352A publication Critical patent/JPS62158352A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PURPOSE:To improve packaging density, and to complete a function by also projecting a lead to at least one surface of upper and lower surfaces besides the surface of a resin seal body. CONSTITUTION:A semiconductor element 1 section is sealed by a resin sealing body 14 through resin-seal molding, and tie-bar 12b is cut off. Consequently, a resin-seal semiconductor device in which leads 12c are protruded from both side surfaces of the resin sealing body 14, leads 12d are projected from an upper surface and leads 12e are protruded from a lower surface is manufactured. Separate pads are connected by connecting the leads 12d projected from the upper surface by connecting wires on the upper surface of the semiconductor element 1. Accordingly, other electronic parts are connected to the leads 12d or 12e from the upper surface or the lower surface, thus increasing packaging density, then improving the function and performance of the semiconductor element.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、樹脂封止体から複数方向にリードを出した
樹脂封止半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a resin-sealed semiconductor device having leads extending in a plurality of directions from a resin-sealed body.

〔従来の技術〕[Conventional technology]

この種の従来の樹脂封止半導体装置の樹脂封止前の状態
はM5図のようになっていた。2はリードフレームで、
タイバー2bに多数本のリード2cがつながっている。
The state of this type of conventional resin-sealed semiconductor device before resin sealing was as shown in Fig. M5. 2 is the lead frame,
A large number of leads 2c are connected to the tie bar 2b.

このリードフレーム2のダイパッド2a上に、半導体素
子゛1がAu−8L共晶はんだなどによりダイポンドさ
れている。半導体素子部上面の各ポンディングパッド(
図示は略す)と各リード20部とが金属細線3でそれぞ
れワイヤボンドされている。
A semiconductor element 1 is die-bonded onto the die pad 2a of this lead frame 2 using Au-8L eutectic solder or the like. Each bonding pad (
(not shown) and each lead 20 are wire-bonded using thin metal wires 3.

この半導体素子1部分を樹脂封止成形により、第6図の
ように樹脂封止体4で封止する。この後、タイバー2b
ヲ切シ取ると、樹脂封止体4の両側面から多数本のリー
ド2Cが水平に出された樹脂封止半導体装置となる。こ
れらのり−ド2Cは、必要により下方に折曲ける。この
ように、リード2cは樹脂封止体4の三方又は三方ある
いは四方の側面から出されていた。
This semiconductor element 1 portion is sealed with a resin molding body 4 as shown in FIG. 6 by resin molding. After this, tie bar 2b
When removed, a resin-sealed semiconductor device is obtained in which a large number of leads 2C extend horizontally from both sides of the resin-sealed body 4. These boards 2C can be bent downward if necessary. In this way, the leads 2c were brought out from three sides or three or four sides of the resin sealing body 4.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記のような従来の樹脂封止半導体装置では、リード2
cは樹脂封止体4の側面からしか出せなかった。
In the conventional resin-sealed semiconductor device as described above, lead 2
c could only be taken out from the side surface of the resin sealing body 4.

最近、半導体素子、特に集積回路に要求される機能は複
雑でかつ、高性能、高級になり、限られた面積内にすべ
ての機能を集積するのは困難になってきている。このた
め−1ある機能をもった樹脂封止半導体装置と他の機能
をもった他の半導体装置や電子部品をプリント基板上に
装着して接続しなければならず、占有面積が大きくなっ
ていた。
Recently, the functions required of semiconductor devices, especially integrated circuits, have become complex, high-performance, and high-grade, and it has become difficult to integrate all functions within a limited area. For this reason - 1. Resin-sealed semiconductor devices with one function and other semiconductor devices and electronic components with other functions had to be mounted and connected on a printed circuit board, which increased the area occupied. .

また、半導体素子上の離れたパッド間の接続配線は、限
られた空所では困難で、機能が制約されていた。
Further, connection wiring between separate pads on a semiconductor element is difficult in a limited space, and functionality is restricted.

この発明は、このような問題点を解決するためになされ
たもので、上部に他の半導体装置や電子部品が結合でき
、実装密度が増大され機能が拡大でき、また、半導体素
子上の離れたパッド間の接続が樹脂封止体外で自在に行
える半導体装置を得ることを目的としている0 〔問題点を解決するための手段〕 この発明にかかる樹脂封止半導体装置は、リードを樹脂
封止体の側面の外に、上、下面のうち少なくともその一
面にも出したものである。
This invention was made to solve these problems, and allows other semiconductor devices and electronic components to be connected on the top, increasing packaging density and expanding functionality. It is an object of the present invention to provide a semiconductor device in which connections between pads can be made freely outside the resin molding body. It extends outside of the sides and on at least one of the top and bottom surfaces.

〔作用〕[Effect]

この発明においては、リードが樹脂封止体の側面の外、
上面又は下面あるいは両面にも出されており、他の半導
体装置や電子部品が結合され、さらには、上面又は下面
のリードのうち所要の分間を接続することができる。
In this invention, the lead is outside the side surface of the resin sealing body.
It is exposed on the top surface, the bottom surface, or both sides, and other semiconductor devices or electronic components can be connected thereto, and furthermore, the required length of the leads on the top surface or the bottom surface can be connected.

〔実施例〕〔Example〕

第1図はこの発明による樹脂封止半導体装置の一実施例
を示す樹脂封止前の斜視図である。12はリードフレー
ムで、タイバー12bに多数本のり一ド12cがつなが
っており、上方及び下カヘリード12d及び12eが折
曲げて出されている。このリードフレーム12のダイパ
ッド12a上に、半導体素子1がAu−8i共晶はんだ
などによりダイボンドされている。半導体素子l上面の
各ポンディングパッド(図示は略す)と各リード12c
部とが金属細線3でそれぞれワイヤボンドされている。
FIG. 1 is a perspective view of an embodiment of a resin-sealed semiconductor device according to the present invention before being resin-sealed. Reference numeral 12 designates a lead frame, in which a large number of leads 12c are connected to tie bars 12b, and upper and lower lead leads 12d and 12e are bent and protruded. The semiconductor element 1 is die-bonded onto the die pad 12a of this lead frame 12 using Au-8i eutectic solder or the like. Each bonding pad (not shown) on the upper surface of the semiconductor element l and each lead 12c
The parts are wire-bonded with thin metal wires 3, respectively.

この半導体素子1部分を樹脂封止成形により、第2図の
ように、樹脂封止体14で封止する。この後、タイバー
12b t−切取る。こうして、樹脂封止体14の両側
面からリード12cが水平に出され、上面からリード1
2dが出され、下面からリード12eが出された樹脂封
止半導体装置となる。側面のリード12cのうち不要の
分は切断してもよい。また、リード12cは必要に下方
に折曲ける。
This semiconductor element 1 portion is sealed with a resin molding body 14 as shown in FIG. 2 by resin molding. After this, cut out the tie bar 12b. In this way, the leads 12c are brought out horizontally from both sides of the resin sealing body 14, and the leads 12c are brought out from the top surface.
2d is exposed, and a resin-sealed semiconductor device is obtained in which leads 12e are exposed from the bottom surface. Unnecessary portions of the side leads 12c may be cut off. Further, the lead 12c is bent downward as necessary.

第3図はこの発明の他の実施例を示し、両側面から出さ
れたリード12cは下方に折曲げられ、上面からリード
12dが出されている0半導体素子1上面では離れてい
るバッド(信号)間の接続は、上面から出ているリード
x2ati!it接続線で接続することにより行える0
これによシ、半導体素子1が小さくても、外部で自在に
接続される。
FIG. 3 shows another embodiment of the present invention, in which leads 12c extending from both sides are bent downward, and leads 12d extend from the top surface of the semiconductor element 1. ) is the lead x2ati! coming out from the top! This can be done by connecting with the IT connection line.
Thereby, even if the semiconductor element 1 is small, it can be freely connected externally.

第4図はこの発明の他の異なる実施例を示し、樹脂封止
体14の両側面から多数のリード12cが出され、上面
には先端が水平に折曲けられたリード12fが出されて
いる。
FIG. 4 shows another different embodiment of the present invention, in which a large number of leads 12c are taken out from both sides of the resin sealing body 14, and a lead 12f whose tip is bent horizontally is taken out from the top surface. There is.

このように、上面又は下面から出されたリード12d、
12f又は12eに他の電子部品を接続することによっ
て、実装密度を高め、半導体素子の機能。
In this way, the leads 12d come out from the upper surface or the lower surface,
By connecting other electronic components to 12f or 12e, the packaging density can be increased and the functionality of the semiconductor element can be increased.

性能を増強することができる。Performance can be enhanced.

例えば、マイコンチップのアドレスバスとデータバスを
この発明による装置の樹脂封止体14の上面のり−ド1
2dに配線することにより、上面のリード12dに直接
又はノケットなどのコネクタを介してメモリ素子を接続
すれば、マイコン機能を充実させることができる。また
、リード12d〜12fに接続される工Cのメモリ素子
を入換えることにより、リニアICの特性が変えられる
For example, the address bus and data bus of a microcomputer chip can be connected to the upper surface glue 1 of the resin molded body 14 of the device according to the present invention.
By connecting the memory element to the lead 12d on the top surface directly or via a connector such as a socket, the microcomputer function can be enhanced. Furthermore, the characteristics of the linear IC can be changed by replacing the memory elements connected to the leads 12d to 12f.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれは、リードを樹脂封止体
の側面の外、上面と下面のうち少なくともその一面にも
出したので、小さい占□有面積で半導体装置の実装密度
が高められ、機能が充実される。また、離れたパッド間
の接続ができない半導体素子であっても、樹脂封止体の
上面又は下面のリードによシ外部で自在に接続され、機
能が高められる。
As described above, according to the present invention, since the leads are exposed outside the side surfaces of the resin molded body and on at least one of the top and bottom surfaces, the packaging density of semiconductor devices can be increased with a small occupied area. , the functionality will be enhanced. Further, even in the case of a semiconductor element in which connection between separate pads cannot be made, the functionality can be improved by freely connecting externally with leads on the upper or lower surface of the resin molded body.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明による樹脂封止半導体装置の一実施例
を示す樹脂封止前の斜視図、第2図は第1図の状態から
樹脂封止された半導体装置の斜視図、第3図及び第4因
はこの発明の他のそれぞれ異なる実施例を示す樹脂封止
半導体装置の斜視図、wcs図は従来の半導体装置め樹
脂封止前の斜視図、第6図は第5図の状態から樹脂封止
された半導体装置の斜視因である。
FIG. 1 is a perspective view of an embodiment of a resin-sealed semiconductor device according to the present invention before being sealed with resin, FIG. 2 is a perspective view of the semiconductor device sealed with resin from the state shown in FIG. 1, and FIG. and the fourth factor is a perspective view of a resin-sealed semiconductor device showing other different embodiments of the present invention, a wcs diagram is a perspective view of a conventional semiconductor device before resin sealing, and FIG. 6 is a state shown in FIG. 5. This is the cause of strabismus in semiconductor devices sealed with resin.

Claims (1)

【特許請求の範囲】[Claims] リードフレームに装着された半導体素子部を封止した樹
脂封止体の側面から出された多数本のリードと、上記樹
脂封止体の上面と下面のうち少なくともその一面から出
されたリードとを備えたことを特徴とする樹脂封止半導
体装置。
A large number of leads extending from a side surface of a resin encapsulation body that encapsulates a semiconductor element mounted on a lead frame, and leads extending from at least one of the top and bottom surfaces of the resin encapsulation body. A resin-sealed semiconductor device comprising:
JP96586A 1986-01-06 1986-01-06 Resin sealed semiconductor device Pending JPS62158352A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP96586A JPS62158352A (en) 1986-01-06 1986-01-06 Resin sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP96586A JPS62158352A (en) 1986-01-06 1986-01-06 Resin sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPS62158352A true JPS62158352A (en) 1987-07-14

Family

ID=11488348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP96586A Pending JPS62158352A (en) 1986-01-06 1986-01-06 Resin sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS62158352A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2519332B2 (en) * 1988-07-08 1996-07-31 沖電気工業株式会社 Semiconductor device
US5629574A (en) * 1992-06-30 1997-05-13 Sgs-Thomson Microelectronics, S.R.L. Control interface device for an electric motor
US5656550A (en) * 1994-08-24 1997-08-12 Fujitsu Limited Method of producing a semicondutor device having a lead portion with outer connecting terminal
US5889333A (en) * 1994-08-09 1999-03-30 Fujitsu Limited Semiconductor device and method for manufacturing such
US6025650A (en) * 1994-08-24 2000-02-15 Fujitsu Limited Semiconductor device including a frame terminal
JP2017212349A (en) * 2016-05-26 2017-11-30 三菱電機株式会社 Semiconductor device and manufacturing method of the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2519332B2 (en) * 1988-07-08 1996-07-31 沖電気工業株式会社 Semiconductor device
US5629574A (en) * 1992-06-30 1997-05-13 Sgs-Thomson Microelectronics, S.R.L. Control interface device for an electric motor
US5889333A (en) * 1994-08-09 1999-03-30 Fujitsu Limited Semiconductor device and method for manufacturing such
US5656550A (en) * 1994-08-24 1997-08-12 Fujitsu Limited Method of producing a semicondutor device having a lead portion with outer connecting terminal
US6025650A (en) * 1994-08-24 2000-02-15 Fujitsu Limited Semiconductor device including a frame terminal
JP2017212349A (en) * 2016-05-26 2017-11-30 三菱電機株式会社 Semiconductor device and manufacturing method of the same
CN107437509A (en) * 2016-05-26 2017-12-05 三菱电机株式会社 Semiconductor device and its manufacture method
DE102017205116B4 (en) 2016-05-26 2022-08-18 Mitsubishi Electric Corporation Semiconductor device and manufacturing method thereof

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