JPS62154661A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS62154661A
JPS62154661A JP60295008A JP29500885A JPS62154661A JP S62154661 A JPS62154661 A JP S62154661A JP 60295008 A JP60295008 A JP 60295008A JP 29500885 A JP29500885 A JP 29500885A JP S62154661 A JPS62154661 A JP S62154661A
Authority
JP
Japan
Prior art keywords
semiconductor
electrode layer
conductivity type
mis
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60295008A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0441499B2 (enrdf_load_stackoverflow
Inventor
Kazuo Kihara
木原 和雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60295008A priority Critical patent/JPS62154661A/ja
Publication of JPS62154661A publication Critical patent/JPS62154661A/ja
Publication of JPH0441499B2 publication Critical patent/JPH0441499B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP60295008A 1985-12-26 1985-12-26 半導体装置 Granted JPS62154661A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60295008A JPS62154661A (ja) 1985-12-26 1985-12-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60295008A JPS62154661A (ja) 1985-12-26 1985-12-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS62154661A true JPS62154661A (ja) 1987-07-09
JPH0441499B2 JPH0441499B2 (enrdf_load_stackoverflow) 1992-07-08

Family

ID=17815141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60295008A Granted JPS62154661A (ja) 1985-12-26 1985-12-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS62154661A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0870321A4 (en) * 1995-11-28 2000-10-11 Micro Devices Corp California THIN FILM CAPACITOR STRUCTURES PROTECTED FROM ELECTROSTATIC DISCHARGE
JP2008034705A (ja) * 2006-07-31 2008-02-14 New Japan Radio Co Ltd 半導体装置
JP2022538846A (ja) * 2019-06-27 2022-09-06 マイクロン テクノロジー,インク. コンデンサ構造体

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0870321A4 (en) * 1995-11-28 2000-10-11 Micro Devices Corp California THIN FILM CAPACITOR STRUCTURES PROTECTED FROM ELECTROSTATIC DISCHARGE
JP2008034705A (ja) * 2006-07-31 2008-02-14 New Japan Radio Co Ltd 半導体装置
JP2022538846A (ja) * 2019-06-27 2022-09-06 マイクロン テクノロジー,インク. コンデンサ構造体
US11935883B2 (en) 2019-06-27 2024-03-19 Lodestar Licensing Group Llc Capacitor structures and apparatus containing such capacitor structures
US12382726B2 (en) 2019-06-27 2025-08-05 Lodestar Licensing Group Llc Capacitor structures

Also Published As

Publication number Publication date
JPH0441499B2 (enrdf_load_stackoverflow) 1992-07-08

Similar Documents

Publication Publication Date Title
US5682047A (en) Input-output (I/O) structure with capacitively triggered thyristor for electrostatic discharge (ESD) protection
US6933551B1 (en) Large value, compact, high yielding integrated circuit capacitors
JP3369391B2 (ja) 誘電体分離型半導体装置
JPH09331072A (ja) 半導体装置及びその製造方法
JPS62154661A (ja) 半導体装置
US5637887A (en) Silicon controller rectifier (SCR) with capacitive trigger
JP2579989B2 (ja) 静電破壊保護装置
JP3275218B2 (ja) 半導体装置及びその形成方法
JPH07147384A (ja) 半導体装置
JPH10223843A (ja) 半導体装置の保護回路
TWI231593B (en) Line skeleton of power MOS product having gate-source protection diode
JP3134443B2 (ja) 半導体入力保護装置
JPS6355871B2 (enrdf_load_stackoverflow)
JPS60137053A (ja) 半導体容量素子
JPH0587137B2 (enrdf_load_stackoverflow)
JPS6156458A (ja) 半導体装置
JP2996346B2 (ja) Mos集積回路
JPH04312967A (ja) 半導体装置
JPH04162681A (ja) 半導体装置
US7485972B2 (en) Semiconductor device
JPH0239468A (ja) 半導体装置
JPH05160341A (ja) 集積回路装置のノイズ除去用キャパシタ
JPH06216233A (ja) 高耐圧半導体装置
JPS63258056A (ja) 半導体装置
JPS59104171A (ja) 半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term