1231593 玖、發明說明 【發明所屬之技術領域】 本發明《有關於-種功率金氧半電晶體產品之線路 架構’且特別是有關於一種具有閘源極保護二極體之功率 金氧半電晶體產品的線路架構。 ' 【先前技術】 靜電放電（Electrostatic Discharge ; ESD)為造成電子 系統失效的主要潛在因素之一。當帶有靜電之物體接觸到 半導體裝置時，所產生之瞬間高壓會造成積體電路之絕緣 體崩潰及熱損害。隨著半導體裝置之日益複雜，元件對瞬 間高壓的敏銳度隨之提高，所以為提昇電子元件之可靠 度，需在電子元件内加入靜電放電保護元件，以避免靜電 放電現象而造成元件損壞。 、A —般而言，半導體工業於積體電路中加入之保護元件 通常位於外部接點和積體電路之間，提供靜電放電現象一 條放電之途徑，以使内部電路免於損壞。請同時參照第1 3與第2圖，第1圖為習知具有閘源極保護二極體的功率 金氧半電晶體產品之局部結構剖面圖，第2圖為第丨圖具 有閘源極保護二極體的功率金氧半電晶體產品之線路架 構俯視圖。 在第1圖中，汲極金屬層102位在矽基材1〇〇之底 —’作為汲極之磊晶矽層1 〇4位在矽基材1 〇〇之上。p型 元件基體區1〇8和源極110位在在磊晶矽層1〇4中，閘氧 1231593 化層112和閘極114位在磊晶矽層1 04之上。而作為絕緣 用之硼磷矽玻璃層117覆蓋在閘極114之上，源極金屬 130則位於硼磷矽玻璃層117上方與P型元件基體區ι〇8 和源極11 0電性相接。 在第1圖與第2圖中，閘源極保護二極體17〇為一 npn雙反向二極體，位於磊晶矽層1〇4之上，其包含n型 重摻雜區170a和170b，以及P型輕摻雜區170c。N型重 摻雜區170a以閘極金屬層16〇與閘極銲墊120相接，而 另一 N型重摻雜區170b則藉著源極金屬層i3〇和源極u〇 相連，則閘極銲墊120和源極11〇是藉由p型輕摻雜區 170c相互絕緣隔離。閘源極保護二極體丨7〇是用來做為 靜電放電保護元件，以減低靜電效應所造成的元件損害。 在第2圖中，閘極（圖上未繪出）、閘極銲墊12〇與閘 極連線115是由同一層多晶矽層所構成，上述三者彼此相 連，而閘極銲墊120藉著其上之閘極金屬層16〇與外部電 路相接。此外，在閘極連接線丨丨5之外圍佈上與源極金屬 層130連接相接之場板連線15〇，場板連線15()與源極金 屬層130經由導電插塞14〇中之導電插塞互相連接。 習知功率金氧半導體產品之線路架構將閘極連線 11 5和場板連線丨5 〇分開，並包含閘源極保護二極體工 以作為閘源極絕緣之用。因產品之場板連線15〇和閘源極 保護二極體170皆必須佔據晶粒（die)之部分面積，以致晶 粒尺寸無法更進一步縮小，因此需要一種新的功率金氧半 電晶體產品的線路架構，來重新設計閘源極保護二極體與 1231593 場板連線的線路’以節省元件佔據空間賴縮小晶粒尺寸。 【發明内容】 因此本發明的目的就是在提供一種具有閘源極保護 二極體的功率金氧半電晶體產品之線路架構，將場板連線 與閘源極保護二極體整合至閘極連線上，以節省元件設計 空間以及縮小晶粒尺寸。 根據本發明之上述目的，提出一種功率金氧半電晶體 之線路架構。 依照本發明一較佳實施例，此線路架構包含源極金屬 層、圍繞源極金屬層外圍之第一導電型之閘極連線、導電 插塞以及第一導電型之二摻雜區。上述之源極金屬層係與 至夕功率金氧半電晶體之源極電性連接，而第一導電型 之閘極連線分別與上述之功率金氧半電晶體之閘極電性 連接以及藉由導電插塞與源極金屬層電性連接。上述之二 摻雜區分別位導電插塞兩側之閘極連線上。 由上述可知，本發明將場板連線與閉源極保護二極體 整合至閘極連線上， ，因此不僅可將線路簡化也可減少原先1231593 发明 Description of the invention [Technical field to which the invention belongs] The present invention "is about-a circuit architecture of a kind of power metal-oxide semiconductor product" and particularly relates to a power metal-oxide semiconductor with a gate-source protection diode Circuit architecture of crystal products. '[Previous technology] Electrostatic discharge (ESD) is one of the main potential factors that cause the failure of electronic systems. When an object with static electricity comes in contact with a semiconductor device, the instantaneous high voltage generated can cause the insulator of the integrated circuit to collapse and be thermally damaged. With the increasing complexity of semiconductor devices, the sensitivity of components to transient high voltages has increased. Therefore, in order to improve the reliability of electronic components, electrostatic discharge protection components must be added to electronic components to avoid electrostatic discharge and cause component damage. A—In general, the protection components added to the integrated circuit by the semiconductor industry are usually located between the external contacts and the integrated circuit, providing a discharge path for electrostatic discharge to prevent internal circuits from being damaged. Please refer to Figs. 13 and 2 at the same time. Fig. 1 is a cross-sectional view of a partial structure of a conventional power metal oxide semiconductor product with a gate-source protection diode, and Fig. 2 is a diagram showing a gate-source electrode. Top view of the circuit architecture of a power MOSFET that protects the diode. In FIG. 1, the drain metal layer 102 is located at the bottom of the silicon substrate 100-'as the epitaxial silicon layer 100 of the drain is located at the silicon substrate 100. The p-type element base region 108 and the source 110 are located in the epitaxial silicon layer 104, and the gate oxide 1231593 and the gate 114 are located above the epitaxial silicon layer 104. The borophosphosilicate glass layer 117 as an insulation layer is covered on the gate 114, and the source metal 130 is located above the borophosphosilicate glass layer 117 and is electrically connected to the P-type element base region ι 08 and the source 110. . In FIG. 1 and FIG. 2, the gate-source protection diode 170 is an npn dual reverse diode, which is located on the epitaxial silicon layer 104 and includes an n-type heavily doped region 170 a and 170b, and a P-type lightly doped region 170c. The N-type heavily doped region 170a is connected to the gate pad 120 by the gate metal layer 16o, and the other N-type heavily doped region 170b is connected to the source u0 through the source metal layer i3〇. The gate pad 120 and the source 110 are insulated and isolated from each other by a p-type lightly doped region 170c. Gate source protection diodes are used as electrostatic discharge protection components to reduce component damage caused by electrostatic effects. In the second figure, the gate (not shown in the figure), the gate pad 120 and the gate connection 115 are made of the same polycrystalline silicon layer. The three are connected to each other, and the gate pad 120 is borrowed. The gate metal layer 160 is connected to the external circuit. In addition, on the periphery of the gate connection line 5, field plate connection 15 is connected to the source metal layer 130, and the field plate connection 15 () and the source metal layer 130 pass through the conductive plug 14. The conductive plugs are connected to each other. The circuit structure of the conventional power metal oxide semiconductor product separates the gate connection 115 and the field plate connection 5 and includes a gate-source protection diode for gate-source insulation. Because the field plate connection 15 of the product and the gate-source protection diode 170 must occupy a part of the die, so that the grain size cannot be further reduced, a new power metal-oxide semiconductor transistor is required. The circuit structure of the product is used to redesign the circuit connecting the gate-source protection diode and the 1231593 field plate to save the space occupied by the component and reduce the size of the die. [Summary of the Invention] Therefore, the object of the present invention is to provide a circuit structure of a power metal-oxide semiconductor device with a gate-source protection diode, which integrates the field plate connection and the gate-source protection diode to the gate. Wiring to save component design space and reduce die size. According to the above object of the present invention, a circuit structure of a power metal-oxide semiconductor is proposed. According to a preferred embodiment of the present invention, the circuit structure includes a source metal layer, a gate connection of a first conductivity type surrounding the periphery of the source metal layer, a conductive plug, and a doped region of the first conductivity type. The above source metal layer is electrically connected to the source of the power metal-oxide semiconductor transistor, and the gate connection of the first conductive type is electrically connected to the gate of the power metal-oxide semiconductor transistor and It is electrically connected to the source metal layer through a conductive plug. The above two doped regions are respectively located on the gate lines on both sides of the conductive plug. As can be seen from the above, the present invention integrates the field plate connection and the closed-source protection diode on the gate connection, so that the circuit can be simplified and the original can be reduced.
【實施方式】 二極體之功率金氧 丨一較佳實施例，將 本發明揭4 一種具有閘源極保護 半電晶體產品的線路架構。依據本發明 1231593 閘極連線和場板連線合併，並將雙反向二極 、* μ , 八且w /¥]極 連、·在上。如此，不僅原有之場板連線與保護二極體之功& 得以維持，又可㈣、元件設計空間以縮小產品晶粒尺寸此 第3圖係繪示依照本發明一較佳實施例的一種具有 閘源極保護二極體的功率金氧半電晶體產品之線路架構 俯視圖。在第3圖中，在！^型矽基材2〇〇之上，源極金 屬層230覆蓋在晶粒中央之功率金氧半電晶體陣列之 上’與各功率金氧半電晶體之源極電性相接。圍繞在源極 金屬層230周圍之閘極連線21〇,則與各功率金氧半電晶 體的閘極電性相連，並與閘極銲墊22〇互相連結。如此$ 於閘極銲墊220之上打線之後，功率金氧半電晶體陣列之 閘極就和外部電路相連了。此外，閘極連線21〇亦藉由導 電插塞240與源極金屬層230相連。 在本實施例中，將第2圖中習知之場板連線15〇與閘 極連線11 5合併成第3圖之閘極連線230。此乃因為在功 率金氧半電晶體處於「關」的狀態時，對p型基體區與n 型磊晶矽層之p-n接面漏電流較為敏感，而此時閘極之電 壓又與源極相同，皆為接地。所以可將場板連接線與閘極 連接線合而為一如此不僅可以防止功率金氧半電晶體在 「關」的狀態下產生漏電流，還可節省產品晶粒之空間， 對於產品晶粒尺寸之減少十分有幫助。 在第3圖中，在插塞240兩側之閘極連線2 1 〇上形成 至少兩個P型輕摻雜區250。如此，可於插塞240兩側各 形成一個ιιρη雙反向二極體，將閘極銲墊220與源極金屬 Ϊ231593 層230隔開，亦即將功率金氧半電晶體之閘極與源極絕 緣，以作為靜電保護元件。 、由上述之較佳實施例可知’將場板連線與閘極連線合 併，不僅可維持場板連線的功能，亦可節省場板連線原本 所佔據之晶*面積。並且藉由在導電插塞兩狀閑極連線 上各形成-閘源極保護二極體’不但可以絕緣閘極和源 極’更可郎省原本閘源極保護二極體所佔據的晶粒面積。 由上述可知，本發明之閘源極保護二極體的線路架構，具 有減少場板連線和閘源極保護二極體所佔據之晶粒面積 的優點，因此可以減小晶粒尺寸。 雖然本發明已以-較佳實施例揭露如上，然其並 非用以限定本發明’任何熟習此技藝者，纟不脫離本 ^月之精神和範圍内’當可作各種之更動與潤飾，因 此本H之保4 I已圍當視後附之申請專利範圍所界定 者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂’下文特舉-較佳實施例，並配合所附圖式，作詳 細說明如下： 圖為驾知具有閘源極保護二極體的功率金氧半 電晶體產品之局部結構剖面圖。 曰―圖為驾知具有閘源極保護二極體的功率金氧半 電日日體產品之線路架構俯視圖。 1231593 第3圖為根據本發明一較佳實施例的一種具有閘源 極保護二極體的功率金氧半電晶體產品之線路架構俯視 圖。 【元件代表符號簡單說明】 100 :矽基材 104 :磊晶矽層 108 : P型元件基體區 112 :閘氧化層 11 5 :閘極連線 120 :閘極銲墊 140 :接觸窗 160 :閘極金屬層 180 : N型重摻雜 190 : P型輕摻雜 2 1 0 :閘極連線 230 :源極金屬層 250 : P型輕摻雜 102 ： 沒極金屬層 106 ： 元件 110 ： 源極 114 ： 閘極 117 ： 硼磷矽玻璃層 130 ： 源極金屬層 150 ： 場板連線 170 ： 閘源極保護二極體 185 ： N型重摻雜 200 ： N型碎基材 220 ： 閘極銲墊 240 ： 接觸窗[Embodiment] A power metal oxide of a diode is a preferred embodiment, and the present invention discloses a circuit structure of a semi-transistor product with gate-source protection. According to the present invention, the 1231593 gate connection and the field plate connection are combined, and the double reverse two poles, * μ, eight and w / ¥] poles are connected, and above. In this way, not only the original field plate connection and the protection of the diode & work can be maintained, but also the component design space can be reduced to reduce the product grain size. This third figure shows a preferred embodiment according to the present invention. Top view of the circuit architecture of a power metal-oxide-semiconductor product with a gate-source protection diode. In Figure 3, in! On the silicon substrate 200, the source metal layer 230 covers the power metal-oxide-semiconductor array at the center of the crystal grains and is electrically connected to the source of each power metal-oxide-semiconductor. The gate line 21o surrounding the source metal layer 230 is electrically connected to the gate of each power metal-oxide semiconductor and is connected to the gate pad 22o. In this way, after wiring on the gate pad 220, the gate of the power metal-oxide semiconductor transistor array is connected to the external circuit. In addition, the gate connection 21 is also connected to the source metal layer 230 through a conductive plug 240. In this embodiment, the conventional field plate connection 15 in FIG. 2 and the gate connection 115 are merged into the gate connection 230 in FIG. 3. This is because when the power metal-oxide semiconductor transistor is in the "off" state, it is more sensitive to the leakage current at the pn junction between the p-type base region and the n-type epitaxial silicon layer, and the voltage of the gate and the source are at this time. Same, all are grounded. Therefore, the field plate connection line and the gate connection line can be combined into one. This can not only prevent the power metal-oxide semiconductor transistor from generating leakage current in the "off" state, but also save space for product grains. The reduction in size is very helpful. In FIG. 3, at least two P-type lightly doped regions 250 are formed on the gate lines 21 on both sides of the plug 240. In this way, a ιιρη dual reverse diode can be formed on each side of the plug 240 to separate the gate pad 220 from the source metal Ϊ 231593 layer 230, that is, the gate and source of the power metal-oxide semiconductor transistor. Insulated for electrostatic protection. According to the above-mentioned preferred embodiment, it is known that the combination of the field plate connection and the gate connection not only maintains the function of the field plate connection, but also saves the area of the crystal * originally occupied by the field plate connection. And by forming on the two free terminals of the conductive plug, the gate-source protection diode 'can not only insulate the gate and source', but also the crystal occupied by the original gate-source protection diode Grain area. From the above, it can be known that the circuit structure of the gate-source protection diode of the present invention has the advantage of reducing the grain area occupied by the field plate connection and the gate-source protection diode, so the grain size can be reduced. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. 'Any person skilled in the art will not depart from the spirit and scope of this month'. It can be modified and retouched. Therefore, The guarantee 4 I of this H has been deemed as defined in the scope of the attached patent application. [Brief description of the drawings] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the following is a special embodiment-a preferred embodiment, and the accompanying drawings are described in detail as follows: Know the partial structure sectional view of the power metal-oxide semiconductor transistor with gate-source protection diode. "The picture shows the top view of the circuit architecture of the power metal-oxide semi-electric solar products with gate-source protection diodes." 1231593 FIG. 3 is a top view of a circuit structure of a power metal-oxide-semiconductor product having a gate-source protection diode according to a preferred embodiment of the present invention. [Simple description of component representative symbols] 100: silicon substrate 104: epitaxial silicon layer 108: P-type element base region 112: gate oxide layer 11 5: gate connection 120: gate pad 140: contact window 160: gate Electrode metal layer 180: N-type heavily doped 190: P-type lightly doped 2 1 0: Gate connection 230: Source metal layer 250: P-type lightly doped 102: Metal electrode layer 106: Element 110: Source Electrode 114: Gate 117: Borophosphosilicate glass layer 130: Source metal layer 150: Field plate connection 170: Gate source protection diode 185: N-type heavily doped 200: N-type broken substrate 220: Gate Pad 240: contact window