JPS62137867A - ホツトエレクトロントランジスタ - Google Patents
ホツトエレクトロントランジスタInfo
- Publication number
- JPS62137867A JPS62137867A JP60278012A JP27801285A JPS62137867A JP S62137867 A JPS62137867 A JP S62137867A JP 60278012 A JP60278012 A JP 60278012A JP 27801285 A JP27801285 A JP 27801285A JP S62137867 A JPS62137867 A JP S62137867A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitter
- gaas
- base
- type gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002784 hot electron Substances 0.000 title claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010931 gold Substances 0.000 claims description 4
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000005641 tunneling Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- JXIFUGZDVKAFHP-UHFFFAOYSA-N [Ge].[Au].[Au] Chemical compound [Ge].[Au].[Au] JXIFUGZDVKAFHP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60278012A JPS62137867A (ja) | 1985-12-12 | 1985-12-12 | ホツトエレクトロントランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60278012A JPS62137867A (ja) | 1985-12-12 | 1985-12-12 | ホツトエレクトロントランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62137867A true JPS62137867A (ja) | 1987-06-20 |
| JPH0325026B2 JPH0325026B2 (enrdf_load_stackoverflow) | 1991-04-04 |
Family
ID=17591408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60278012A Granted JPS62137867A (ja) | 1985-12-12 | 1985-12-12 | ホツトエレクトロントランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62137867A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951107A (en) * | 1986-08-21 | 1990-08-21 | Zhu En Jun | Kinetic energy modulated hot electron transistor |
-
1985
- 1985-12-12 JP JP60278012A patent/JPS62137867A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951107A (en) * | 1986-08-21 | 1990-08-21 | Zhu En Jun | Kinetic energy modulated hot electron transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0325026B2 (enrdf_load_stackoverflow) | 1991-04-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |