JPH0325026B2 - - Google Patents

Info

Publication number
JPH0325026B2
JPH0325026B2 JP60278012A JP27801285A JPH0325026B2 JP H0325026 B2 JPH0325026 B2 JP H0325026B2 JP 60278012 A JP60278012 A JP 60278012A JP 27801285 A JP27801285 A JP 27801285A JP H0325026 B2 JPH0325026 B2 JP H0325026B2
Authority
JP
Japan
Prior art keywords
layer
emitter
base
doped
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60278012A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62137867A (ja
Inventor
Shunichi Muto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60278012A priority Critical patent/JPS62137867A/ja
Publication of JPS62137867A publication Critical patent/JPS62137867A/ja
Publication of JPH0325026B2 publication Critical patent/JPH0325026B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
JP60278012A 1985-12-12 1985-12-12 ホツトエレクトロントランジスタ Granted JPS62137867A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60278012A JPS62137867A (ja) 1985-12-12 1985-12-12 ホツトエレクトロントランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60278012A JPS62137867A (ja) 1985-12-12 1985-12-12 ホツトエレクトロントランジスタ

Publications (2)

Publication Number Publication Date
JPS62137867A JPS62137867A (ja) 1987-06-20
JPH0325026B2 true JPH0325026B2 (enrdf_load_stackoverflow) 1991-04-04

Family

ID=17591408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60278012A Granted JPS62137867A (ja) 1985-12-12 1985-12-12 ホツトエレクトロントランジスタ

Country Status (1)

Country Link
JP (1) JPS62137867A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1007479B (zh) * 1986-08-21 1990-04-04 朱恩均 动能调制热电子晶体管

Also Published As

Publication number Publication date
JPS62137867A (ja) 1987-06-20

Similar Documents

Publication Publication Date Title
US4617724A (en) Process for fabricating heterojunction bipolar transistor with low base resistance
US5466955A (en) Field effect transistor having an improved transistor characteristic
JPS61147577A (ja) 相補型半導体装置
JPH0325026B2 (enrdf_load_stackoverflow)
JPH0337735B2 (enrdf_load_stackoverflow)
JPH0458706B2 (enrdf_load_stackoverflow)
JPH04277680A (ja) トンネルトランジスタ及びその製造方法
JPH0795598B2 (ja) 半導体装置
JPH0330996B2 (enrdf_load_stackoverflow)
JPH0362303B2 (enrdf_load_stackoverflow)
JPH0422342B2 (enrdf_load_stackoverflow)
JPH0459785B2 (enrdf_load_stackoverflow)
JP2658513B2 (ja) 電界効果トランジスタ
JP3109586B2 (ja) ホットエレクトロントランジスタ
JPH0327537A (ja) 変調ドープ型電界効果トランジスタ
JPH0376787B2 (enrdf_load_stackoverflow)
JPS61274370A (ja) 接合形電界効果トランジスタ
JPH07120792B2 (ja) 半導体装置
JPS61272969A (ja) ホツトエレクトロントランジスタの構造
JPH0458705B2 (enrdf_load_stackoverflow)
JPS62119915A (ja) 半導体装置
JPH05198583A (ja) 横型金属ベーストランジスタ
JPH01244662A (ja) 半導体装置
JPS63301568A (ja) 半導体集積回路装置及びその製造方法
JPS63114258A (ja) ヘテロ接合型バイポ−ラトランジスタ

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term