JPH0330996B2 - - Google Patents

Info

Publication number
JPH0330996B2
JPH0330996B2 JP60109366A JP10936685A JPH0330996B2 JP H0330996 B2 JPH0330996 B2 JP H0330996B2 JP 60109366 A JP60109366 A JP 60109366A JP 10936685 A JP10936685 A JP 10936685A JP H0330996 B2 JPH0330996 B2 JP H0330996B2
Authority
JP
Japan
Prior art keywords
layer
base
gallium arsenide
emitter
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60109366A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61268063A (ja
Inventor
Masahiko Sasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60109366A priority Critical patent/JPS61268063A/ja
Publication of JPS61268063A publication Critical patent/JPS61268063A/ja
Publication of JPH0330996B2 publication Critical patent/JPH0330996B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36Unipolar devices
    • H10D48/362Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • H10D62/605Planar doped, e.g. atomic-plane doped or delta-doped

Landscapes

  • Bipolar Transistors (AREA)
JP60109366A 1985-05-23 1985-05-23 半導体装置 Granted JPS61268063A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60109366A JPS61268063A (ja) 1985-05-23 1985-05-23 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60109366A JPS61268063A (ja) 1985-05-23 1985-05-23 半導体装置

Publications (2)

Publication Number Publication Date
JPS61268063A JPS61268063A (ja) 1986-11-27
JPH0330996B2 true JPH0330996B2 (enrdf_load_stackoverflow) 1991-05-01

Family

ID=14508412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60109366A Granted JPS61268063A (ja) 1985-05-23 1985-05-23 半導体装置

Country Status (1)

Country Link
JP (1) JPS61268063A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS61268063A (ja) 1986-11-27

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term