JPH0362303B2 - - Google Patents

Info

Publication number
JPH0362303B2
JPH0362303B2 JP62063026A JP6302687A JPH0362303B2 JP H0362303 B2 JPH0362303 B2 JP H0362303B2 JP 62063026 A JP62063026 A JP 62063026A JP 6302687 A JP6302687 A JP 6302687A JP H0362303 B2 JPH0362303 B2 JP H0362303B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
compound semiconductor
indium gallium
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP62063026A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63228763A (ja
Inventor
Tatsuya Oohori
Masahiko Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62063026A priority Critical patent/JPS63228763A/ja
Publication of JPS63228763A publication Critical patent/JPS63228763A/ja
Publication of JPH0362303B2 publication Critical patent/JPH0362303B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP62063026A 1987-03-18 1987-03-18 半導体装置 Granted JPS63228763A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62063026A JPS63228763A (ja) 1987-03-18 1987-03-18 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62063026A JPS63228763A (ja) 1987-03-18 1987-03-18 半導体装置

Publications (2)

Publication Number Publication Date
JPS63228763A JPS63228763A (ja) 1988-09-22
JPH0362303B2 true JPH0362303B2 (enrdf_load_stackoverflow) 1991-09-25

Family

ID=13217406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62063026A Granted JPS63228763A (ja) 1987-03-18 1987-03-18 半導体装置

Country Status (1)

Country Link
JP (1) JPS63228763A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69111120T2 (de) * 1990-04-11 1996-04-04 Hughes Aircraft Co HEMT-Struktur mit passivierter Struktur.
JP3086748B2 (ja) * 1991-07-26 2000-09-11 株式会社東芝 高電子移動度トランジスタ
JP2581452B2 (ja) * 1994-06-06 1997-02-12 日本電気株式会社 電界効果トランジスタ
US6933542B2 (en) 2003-02-10 2005-08-23 Matsushita Electric Industrial Co., Ltd. Field-effect transistor, and integrated circuit device and switching circuit using the same

Also Published As

Publication number Publication date
JPS63228763A (ja) 1988-09-22

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees