JPS63228763A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS63228763A
JPS63228763A JP62063026A JP6302687A JPS63228763A JP S63228763 A JPS63228763 A JP S63228763A JP 62063026 A JP62063026 A JP 62063026A JP 6302687 A JP6302687 A JP 6302687A JP S63228763 A JPS63228763 A JP S63228763A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
compound semiconductor
indium gallium
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62063026A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0362303B2 (enrdf_load_stackoverflow
Inventor
Tatsuya Ohori
達也 大堀
Masahiko Takigawa
正彦 滝川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62063026A priority Critical patent/JPS63228763A/ja
Publication of JPS63228763A publication Critical patent/JPS63228763A/ja
Publication of JPH0362303B2 publication Critical patent/JPH0362303B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP62063026A 1987-03-18 1987-03-18 半導体装置 Granted JPS63228763A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62063026A JPS63228763A (ja) 1987-03-18 1987-03-18 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62063026A JPS63228763A (ja) 1987-03-18 1987-03-18 半導体装置

Publications (2)

Publication Number Publication Date
JPS63228763A true JPS63228763A (ja) 1988-09-22
JPH0362303B2 JPH0362303B2 (enrdf_load_stackoverflow) 1991-09-25

Family

ID=13217406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62063026A Granted JPS63228763A (ja) 1987-03-18 1987-03-18 半導体装置

Country Status (1)

Country Link
JP (1) JPS63228763A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226041A (ja) * 1990-04-11 1992-08-14 Hughes Aircraft Co パッシベーションドナー層を備えたｈｅｍｔ構造
US5319223A (en) * 1991-07-26 1994-06-07 Kabushiki Kaisha Toshiba High electron mobility transistor
US5504353A (en) * 1994-06-06 1996-04-02 Nec Corporation Field effect transistor
US6933542B2 (en) 2003-02-10 2005-08-23 Matsushita Electric Industrial Co., Ltd. Field-effect transistor, and integrated circuit device and switching circuit using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226041A (ja) * 1990-04-11 1992-08-14 Hughes Aircraft Co パッシベーションドナー層を備えたｈｅｍｔ構造
US5319223A (en) * 1991-07-26 1994-06-07 Kabushiki Kaisha Toshiba High electron mobility transistor
US5504353A (en) * 1994-06-06 1996-04-02 Nec Corporation Field effect transistor
US6933542B2 (en) 2003-02-10 2005-08-23 Matsushita Electric Industrial Co., Ltd. Field-effect transistor, and integrated circuit device and switching circuit using the same

Also Published As

Publication number Publication date
JPH0362303B2 (enrdf_load_stackoverflow) 1991-09-25

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees