JPS6210033B2 - - Google Patents

Info

Publication number
JPS6210033B2
JPS6210033B2 JP53020654A JP2065478A JPS6210033B2 JP S6210033 B2 JPS6210033 B2 JP S6210033B2 JP 53020654 A JP53020654 A JP 53020654A JP 2065478 A JP2065478 A JP 2065478A JP S6210033 B2 JPS6210033 B2 JP S6210033B2
Authority
JP
Japan
Prior art keywords
insulating film
mis type
semiconductor
electron beam
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53020654A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54114081A (en
Inventor
Hideo Yoshino
Toshio Kobayashi
Eisuke Arai
Yutaka Sakakibara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2065478A priority Critical patent/JPS54114081A/ja
Publication of JPS54114081A publication Critical patent/JPS54114081A/ja
Publication of JPS6210033B2 publication Critical patent/JPS6210033B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2065478A 1978-02-24 1978-02-24 Semiconductor integrated circuit device Granted JPS54114081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2065478A JPS54114081A (en) 1978-02-24 1978-02-24 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2065478A JPS54114081A (en) 1978-02-24 1978-02-24 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS54114081A JPS54114081A (en) 1979-09-05
JPS6210033B2 true JPS6210033B2 (enrdf_load_stackoverflow) 1987-03-04

Family

ID=12033195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2065478A Granted JPS54114081A (en) 1978-02-24 1978-02-24 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS54114081A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147773A (ja) * 1985-12-20 1987-07-01 Nec Corp 半導体装置の製造方法
JPS63221632A (ja) * 1987-03-10 1988-09-14 Nec Corp 半導体装置の製造方法
JP2523376B2 (ja) * 1989-07-03 1996-08-07 東京瓦斯株式会社 Ｍｏｓトランジスタの製造方法および集積回路

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES=1968 *
IEEE TRANSACTIONS ON NUCLEAR SCIENCE=1975 *
IEEE TRANSACTIONS ON NUELEAR SCIENCE=1976 *
PROCEEDINGS OF THE IEEE=1967 *
RCA REVIEW 28=1976 *

Also Published As

Publication number Publication date
JPS54114081A (en) 1979-09-05

Similar Documents

Publication Publication Date Title
US3789504A (en) Method of manufacturing an n-channel mos field-effect transistor
JPS63244776A (ja) 絶縁ゲ−ト型電界効果トランジスタの製造方法
US4603472A (en) Method of making MOS FETs using silicate glass layer as gate edge masking for ion implantation
JPS6224945B2 (enrdf_load_stackoverflow)
JPS5893279A (ja) 半導体装置の製造方法
JPS6210033B2 (enrdf_load_stackoverflow)
JPS6360549B2 (enrdf_load_stackoverflow)
JPH0552069B2 (enrdf_load_stackoverflow)
JPH0412629B2 (enrdf_load_stackoverflow)
JPS62122170A (ja) Ｍｉｓトランジスタ及びその製造方法
JPH0434942A (ja) 半導体装置の製造方法
JP2569809B2 (ja) 半導体装置の製造方法
JPS6057671A (ja) 半導体装置の製造方法
JPH0481327B2 (enrdf_load_stackoverflow)
JPH03231456A (ja) 半導体装置の製造方法
JP2880885B2 (ja) 半導体集積回路装置及びその製造方法
JPH0412024B2 (enrdf_load_stackoverflow)
JPH01278768A (ja) ソースおよびドレイン深さ延長部を有する半導体装置とその製造方法
JPS6193641A (ja) 半導体装置
JPS59150477A (ja) 半導体装置の製造方法
CN112750835A (zh) 反熔丝结构及其制作方法
TW436908B (en) Method to form a smooth gate polysilicon sidewall in the fabrication of integrated circuits
CN104425376A (zh) Cmos管的制造方法及cmos管
JPH0258771B2 (enrdf_load_stackoverflow)
JPH01232718A (ja) 半導体装置の製造方法