JPS54114081A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS54114081A JPS54114081A JP2065478A JP2065478A JPS54114081A JP S54114081 A JPS54114081 A JP S54114081A JP 2065478 A JP2065478 A JP 2065478A JP 2065478 A JP2065478 A JP 2065478A JP S54114081 A JPS54114081 A JP S54114081A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- type
- electron beam
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 238000010894 electron beam technology Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2065478A JPS54114081A (en) | 1978-02-24 | 1978-02-24 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2065478A JPS54114081A (en) | 1978-02-24 | 1978-02-24 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54114081A true JPS54114081A (en) | 1979-09-05 |
JPS6210033B2 JPS6210033B2 (enrdf_load_stackoverflow) | 1987-03-04 |
Family
ID=12033195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2065478A Granted JPS54114081A (en) | 1978-02-24 | 1978-02-24 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54114081A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62147773A (ja) * | 1985-12-20 | 1987-07-01 | Nec Corp | 半導体装置の製造方法 |
JPS63221632A (ja) * | 1987-03-10 | 1988-09-14 | Nec Corp | 半導体装置の製造方法 |
JPH0335531A (ja) * | 1989-07-03 | 1991-02-15 | Tokyo Gas Co Ltd | Mosトランジスタの製造方法および集積回路 |
-
1978
- 1978-02-24 JP JP2065478A patent/JPS54114081A/ja active Granted
Non-Patent Citations (5)
Title |
---|
IEEE TRANSACTIONS ON ELECTRON DEVICES=1968 * |
IEEE TRANSACTIONS ON NUCLEAR SCIENCE=1975 * |
IEEE TRANSACTIONS ON NUELEAR SCIENCE=1976 * |
PROCEEDINGS OF THE IEEE=1967 * |
RCA REVIEW 28=1976 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62147773A (ja) * | 1985-12-20 | 1987-07-01 | Nec Corp | 半導体装置の製造方法 |
JPS63221632A (ja) * | 1987-03-10 | 1988-09-14 | Nec Corp | 半導体装置の製造方法 |
JPH0335531A (ja) * | 1989-07-03 | 1991-02-15 | Tokyo Gas Co Ltd | Mosトランジスタの製造方法および集積回路 |
Also Published As
Publication number | Publication date |
---|---|
JPS6210033B2 (enrdf_load_stackoverflow) | 1987-03-04 |
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