JPS54114081A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS54114081A
JPS54114081A JP2065478A JP2065478A JPS54114081A JP S54114081 A JPS54114081 A JP S54114081A JP 2065478 A JP2065478 A JP 2065478A JP 2065478 A JP2065478 A JP 2065478A JP S54114081 A JPS54114081 A JP S54114081A
Authority
JP
Japan
Prior art keywords
film
region
type
electron beam
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2065478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6210033B2 (enrdf_load_stackoverflow
Inventor
Hideo Yoshino
Toshio Kobayashi
Eisuke Arai
Yutaka Sakakibara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2065478A priority Critical patent/JPS54114081A/ja
Publication of JPS54114081A publication Critical patent/JPS54114081A/ja
Publication of JPS6210033B2 publication Critical patent/JPS6210033B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
JP2065478A 1978-02-24 1978-02-24 Semiconductor integrated circuit device Granted JPS54114081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2065478A JPS54114081A (en) 1978-02-24 1978-02-24 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2065478A JPS54114081A (en) 1978-02-24 1978-02-24 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS54114081A true JPS54114081A (en) 1979-09-05
JPS6210033B2 JPS6210033B2 (enrdf_load_stackoverflow) 1987-03-04

Family

ID=12033195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2065478A Granted JPS54114081A (en) 1978-02-24 1978-02-24 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS54114081A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147773A (ja) * 1985-12-20 1987-07-01 Nec Corp 半導体装置の製造方法
JPS63221632A (ja) * 1987-03-10 1988-09-14 Nec Corp 半導体装置の製造方法
JPH0335531A (ja) * 1989-07-03 1991-02-15 Tokyo Gas Co Ltd Mosトランジスタの製造方法および集積回路

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES=1968 *
IEEE TRANSACTIONS ON NUCLEAR SCIENCE=1975 *
IEEE TRANSACTIONS ON NUELEAR SCIENCE=1976 *
PROCEEDINGS OF THE IEEE=1967 *
RCA REVIEW 28=1976 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147773A (ja) * 1985-12-20 1987-07-01 Nec Corp 半導体装置の製造方法
JPS63221632A (ja) * 1987-03-10 1988-09-14 Nec Corp 半導体装置の製造方法
JPH0335531A (ja) * 1989-07-03 1991-02-15 Tokyo Gas Co Ltd Mosトランジスタの製造方法および集積回路

Also Published As

Publication number Publication date
JPS6210033B2 (enrdf_load_stackoverflow) 1987-03-04

Similar Documents

Publication Publication Date Title
JPS5623771A (en) Semiconductor memory
JPS56125868A (en) Thin-film semiconductor device
JPS5710266A (en) Mis field effect semiconductor device
JPS54114081A (en) Semiconductor integrated circuit device
JPS5623781A (en) Semiconductor device
JPS5681973A (en) Manufacture of mos type semiconductor device
JPS5585068A (en) Preparation of semiconductor device
JPS56118349A (en) Semiconductor device
JPS54161889A (en) Insulated gate type field effect transistor
JPS5499578A (en) Field effect transistor
JPS5448179A (en) Mis-type semiconductor integrated circuit device
JPS5556663A (en) Insulating-gate type field-effect transistor
JPS56125875A (en) Semiconductor integrated circuit device
JPS5478673A (en) Manufacture of complementary insulator gate field effect transistor
JPS572579A (en) Manufacture of junction type field effect transistor
JPS54109761A (en) Manufacture of semiconductor device
JPS5443688A (en) Production of semiconductor integrated circuit unit
JPS5448182A (en) Semiconductor integrated circuit device
JPS54129984A (en) Manufacture of semiconductor device
JPS57160171A (en) Manufacture of semiconductor device
JPS54104782A (en) Mos type semiconductor device
JPS54121081A (en) Integrated circuit device
JPS54105979A (en) Semiconductor device
JPS572576A (en) Semiconductor device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof