JPS6193648A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6193648A
JPS6193648A JP21554884A JP21554884A JPS6193648A JP S6193648 A JPS6193648 A JP S6193648A JP 21554884 A JP21554884 A JP 21554884A JP 21554884 A JP21554884 A JP 21554884A JP S6193648 A JPS6193648 A JP S6193648A
Authority
JP
Japan
Prior art keywords
wiring
layer
region
melting point
point metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21554884A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530056B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Toshiji Yamauchi
山内　利治
Nobuhito Iwasaki
岩崎　信人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21554884A priority Critical patent/JPS6193648A/ja
Publication of JPS6193648A publication Critical patent/JPS6193648A/ja
Publication of JPH0530056B2 publication Critical patent/JPH0530056B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP21554884A 1984-10-15 1984-10-15 半導体装置の製造方法 Granted JPS6193648A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21554884A JPS6193648A (ja) 1984-10-15 1984-10-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21554884A JPS6193648A (ja) 1984-10-15 1984-10-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6193648A true JPS6193648A (ja) 1986-05-12
JPH0530056B2 JPH0530056B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-07

Family

ID=16674252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21554884A Granted JPS6193648A (ja) 1984-10-15 1984-10-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6193648A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846650A (ja) * 1981-09-16 1983-03-18 Nippon Telegr & Teleph Corp <Ntt> 電極配線の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846650A (ja) * 1981-09-16 1983-03-18 Nippon Telegr & Teleph Corp <Ntt> 電極配線の製造方法

Also Published As

Publication number Publication date
JPH0530056B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-07

Similar Documents

Publication Publication Date Title
US4801559A (en) Process for forming planar wiring using polysilicon to fill gaps
JPS6173370A (ja) 半導体装置及びその製造方法
JP3626773B2 (ja) 半導体デバイスの導電層、ｍｏｓｆｅｔ及びそれらの製造方法
JPS6213819B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6056293B2 (ja) 半導体集積回路装置の製造方法
JPS59175726A (ja) 半導体装置の製造方法
KR100328905B1 (ko) 내화성금속실리사이드층형성방법
JPH1092764A (ja) 半導体素子のポリサイド層形成方法
JPS6193648A (ja) 半導体装置の製造方法
JPH02130961A (ja) 電界効果型トランジスタ
JP2725919B2 (ja) 半導体装置の製造方法
JP2874885B2 (ja) 半導体装置及びその製造方法
JPS63283161A (ja) 半導体装置とその製造方法
JP3017810B2 (ja) 半導体装置の製造方法
JP2822276B2 (ja) 半導体装置の電極形成法
JP3147930B2 (ja) 多結晶シリコン高抵抗素子の製造方法
JPH05136137A (ja) 半導体装置の製造方法
JPS63265448A (ja) Ｍｏｓ型半導体装置の製造方法
JPH0697166A (ja) 電極構造およびその製造方法
JPH02268443A (ja) 半導体装置
JPS61220468A (ja) 半導体装置
JPH03214735A (ja) 半導体装置の製造方法
JPS59189657A (ja) 半導体装置の製造方法
JPS6298620A (ja) 半導体装置の製造方法
JPH01298744A (ja) 半導体装置の製造方法