JPS6169183A - Ｍｏｓ型ホール素子の製造方法 - Google Patents

Ｍｏｓ型ホール素子の製造方法

Info

Publication number
JPS6169183A
JPS6169183A JP60192658A JP19265885A JPS6169183A JP S6169183 A JPS6169183 A JP S6169183A JP 60192658 A JP60192658 A JP 60192658A JP 19265885 A JP19265885 A JP 19265885A JP S6169183 A JPS6169183 A JP S6169183A
Authority
JP
Japan
Prior art keywords
output terminal
region
gate electrode
mask
hall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60192658A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0224391B2 (enrdf_load_stackoverflow
Inventor
Masaki Hirata
平田　雅規
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60192658A priority Critical patent/JPS6169183A/ja
Publication of JPS6169183A publication Critical patent/JPS6169183A/ja
Publication of JPH0224391B2 publication Critical patent/JPH0224391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)
JP60192658A 1985-08-30 1985-08-30 Ｍｏｓ型ホール素子の製造方法 Granted JPS6169183A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60192658A JPS6169183A (ja) 1985-08-30 1985-08-30 Ｍｏｓ型ホール素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60192658A JPS6169183A (ja) 1985-08-30 1985-08-30 Ｍｏｓ型ホール素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6169183A true JPS6169183A (ja) 1986-04-09
JPH0224391B2 JPH0224391B2 (enrdf_load_stackoverflow) 1990-05-29

Family

ID=16294891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60192658A Granted JPS6169183A (ja) 1985-08-30 1985-08-30 Ｍｏｓ型ホール素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6169183A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249805A (ja) * 1994-03-09 1995-09-26 Toshiba Corp ホール素子
JP2009295986A (ja) * 2008-06-09 2009-12-17 Hitachi Ltd 磁気抵抗素子
JP2009295987A (ja) * 2008-06-09 2009-12-17 Hitachi Ltd 磁気抵抗素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249805A (ja) * 1994-03-09 1995-09-26 Toshiba Corp ホール素子
JP2009295986A (ja) * 2008-06-09 2009-12-17 Hitachi Ltd 磁気抵抗素子
JP2009295987A (ja) * 2008-06-09 2009-12-17 Hitachi Ltd 磁気抵抗素子

Also Published As

Publication number Publication date
JPH0224391B2 (enrdf_load_stackoverflow) 1990-05-29

Similar Documents

Publication Publication Date Title
JPH08204194A (ja) 比較的少ない数のマスキング工程で製造され、末端領域に厚い酸化層を有するトレンチ型ｄｍｏｓトランジスタとその製造方法
JPS6169183A (ja) Ｍｏｓ型ホール素子の製造方法
KR970024267A (ko) 트렌치 DMOS 트랜지스터와 그의 제조방법(a trench DMOS and a method of fabricating the same)
JPS63228710A (ja) 半導体装置
JPS6143477A (ja) Ｍｏｓトランジスタの製造方法
JPH08172135A (ja) 半導体装置の製造方法および半導体集積回路装置
US4288910A (en) Method of manufacturing a semiconductor device
JPH02260564A (ja) 半導体装置及びその製造方法
JPS6272171A (ja) 半導体メモリ
KR970004079A (ko) 반도체소자 및 그 제조방법
JPH01179367A (ja) 薄膜トランジスタの製造方法
JPH0340415A (ja) アライメントマーク及びアライメントマーク形成方法
JPS61207051A (ja) 半導体装置
JPH043983A (ja) 不揮発性半導体メモリ
JPH02203536A (ja) 半導体装置の製造方法
JPH02272760A (ja) Ｍｏｓトランジスタ
JPH03190140A (ja) Ｍｏｓトランジスタとその製造方法
JPS59219964A (ja) 半導体装置の製造方法
JPS61128571A (ja) 半導体装置の製造方法
JPH0462875A (ja) 半導体装置
JP2875526B1 (ja) 不揮発性半導体記憶装置の製造方法
JPS6211516B2 (enrdf_load_stackoverflow)
JPS61140164A (ja) 半導体集積回路の製造方法
JPH0461497B2 (enrdf_load_stackoverflow)
JPS6210007B2 (enrdf_load_stackoverflow)