JPS6160577B2 - - Google Patents

Info

Publication number
JPS6160577B2
JPS6160577B2 JP56176912A JP17691281A JPS6160577B2 JP S6160577 B2 JPS6160577 B2 JP S6160577B2 JP 56176912 A JP56176912 A JP 56176912A JP 17691281 A JP17691281 A JP 17691281A JP S6160577 B2 JPS6160577 B2 JP S6160577B2
Authority
JP
Japan
Prior art keywords
pattern
film
semiconductor device
manufacturing
organic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56176912A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5878437A (ja
Inventor
Kazuhiko Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56176912A priority Critical patent/JPS5878437A/ja
Publication of JPS5878437A publication Critical patent/JPS5878437A/ja
Publication of JPS6160577B2 publication Critical patent/JPS6160577B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0126—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP56176912A 1981-11-04 1981-11-04 半導体装置の製造方法 Granted JPS5878437A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56176912A JPS5878437A (ja) 1981-11-04 1981-11-04 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56176912A JPS5878437A (ja) 1981-11-04 1981-11-04 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5878437A JPS5878437A (ja) 1983-05-12
JPS6160577B2 true JPS6160577B2 (index.php) 1986-12-22

Family

ID=16021926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56176912A Granted JPS5878437A (ja) 1981-11-04 1981-11-04 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5878437A (index.php)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4762805A (en) * 1985-12-17 1988-08-09 Advanced Micro Devices, Inc. Nitride-less process for VLSI circuit device isolation

Also Published As

Publication number Publication date
JPS5878437A (ja) 1983-05-12

Similar Documents

Publication Publication Date Title
KR950001151B1 (ko) 반도체 장치 제조방법
US4494304A (en) Forming chan-stops by selectively implanting impurity ions through field-oxide layer during later stage of MOS-device fabrication
JPS61145868A (ja) 半導体装置の製造方法
EP0197454B1 (en) Method for making semiconductor devices comprising insulating regions
US5879997A (en) Method for forming self aligned polysilicon contact
JPH098135A (ja) 半導体装置の製造方法
JPS6160577B2 (index.php)
JPH05291180A (ja) 半導体集積回路装置の製造方法
JP2968078B2 (ja) Ｍｏｓトランジスタの製造方法
JPS6197967A (ja) 半導体装置およびその製造方法
JPS62285468A (ja) Ｌｄｄ電界効果トランジスタの製造方法
JPH11163163A (ja) 半導体装置の製造方法
JPH058571B2 (index.php)
JP2968548B2 (ja) 半導体装置及びその製造方法
JP3380069B2 (ja) Ｍｏｓ半導体装置の製造方法
JPS628028B2 (index.php)
JP3521921B2 (ja) 半導体装置の製造方法
KR950008259B1 (ko) 반도체 소자의 엘디디(ldd) 제조 방법
JPH023306B2 (index.php)
JPH07211783A (ja) 半導体装置の製造方法
JP3848782B2 (ja) 半導体装置の製造方法
KR100228274B1 (ko) 반도체장치의 제조방법
KR100213245B1 (ko) 반도체 장치의 소자 분리 방법
JPS61251164A (ja) Ｂｉ−ＭＩＳ集積回路の製造方法
JPS6346774A (ja) 半導体装置の製造方法