JPS6159535B2 - - Google Patents

Info

Publication number
JPS6159535B2
JPS6159535B2 JP52158855A JP15885577A JPS6159535B2 JP S6159535 B2 JPS6159535 B2 JP S6159535B2 JP 52158855 A JP52158855 A JP 52158855A JP 15885577 A JP15885577 A JP 15885577A JP S6159535 B2 JPS6159535 B2 JP S6159535B2
Authority
JP
Japan
Prior art keywords
area
shot key
small
key barrier
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52158855A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5499580A (en
Inventor
Susumu Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP15885577A priority Critical patent/JPS5499580A/ja
Priority to DE2855816A priority patent/DE2855816C2/de
Publication of JPS5499580A publication Critical patent/JPS5499580A/ja
Priority to US06/234,848 priority patent/US4316202A/en
Publication of JPS6159535B2 publication Critical patent/JPS6159535B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/084—Diode-transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP15885577A 1977-12-27 1977-12-27 Semiconductor integrated circuit device Granted JPS5499580A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP15885577A JPS5499580A (en) 1977-12-27 1977-12-27 Semiconductor integrated circuit device
DE2855816A DE2855816C2 (de) 1977-12-27 1978-12-22 Integrierte Halbleiterschaltungsanordnung mit einer Schottky-Sperrschichtdiode
US06/234,848 US4316202A (en) 1977-12-27 1981-02-17 Semiconductor integrated circuit device having a Schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15885577A JPS5499580A (en) 1977-12-27 1977-12-27 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5499580A JPS5499580A (en) 1979-08-06
JPS6159535B2 true JPS6159535B2 (en, 2012) 1986-12-17

Family

ID=15680869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15885577A Granted JPS5499580A (en) 1977-12-27 1977-12-27 Semiconductor integrated circuit device

Country Status (3)

Country Link
US (1) US4316202A (en, 2012)
JP (1) JPS5499580A (en, 2012)
DE (1) DE2855816C2 (en, 2012)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4573064A (en) * 1981-11-02 1986-02-25 Texas Instruments Incorporated GaAs/GaAlAs Heterojunction bipolar integrated circuit devices
JPS6010653A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPS62131452U (en, 2012) * 1986-02-13 1987-08-19
JPH065736B2 (ja) * 1989-12-15 1994-01-19 株式会社東芝 ショットキー・ダイオード
US6342997B1 (en) 1998-02-11 2002-01-29 Therm-O-Disc, Incorporated High sensitivity diode temperature sensor with adjustable current source
US5955793A (en) * 1998-02-11 1999-09-21 Therm-O-Disc, Incorporated High sensitivity diode temperature sensor with adjustable current source
CN113203930B (zh) * 2021-04-23 2022-11-11 深圳市时代速信科技有限公司 一种肖特基结可靠性评估方法及装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770606A (en) * 1968-08-27 1973-11-06 Bell Telephone Labor Inc Schottky barrier diodes as impedance elements and method of making same
US3585412A (en) * 1968-08-27 1971-06-15 Bell Telephone Labor Inc Schottky barrier diodes as impedance elements
US3660822A (en) * 1969-12-15 1972-05-02 Ibm Variable breakdown storage cell with negative resistance operating characteristic
US3719797A (en) * 1971-12-16 1973-03-06 Bell Telephone Labor Inc Solid state temperature sensor employing a pair of dissimilar schottky-barrier diodes
US3780320A (en) * 1971-12-20 1973-12-18 Ibm Schottky barrier diode read-only memory
US3995301A (en) * 1973-03-23 1976-11-30 Ibm Corporation Novel integratable Schottky Barrier structure and a method for the fabrication thereof
US4199775A (en) * 1974-09-03 1980-04-22 Bell Telephone Laboratories, Incorporated Integrated circuit and method for fabrication thereof
DE2509530C2 (de) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren
JPS5240081A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Bi-polar rom
GB1580977A (en) * 1976-05-31 1980-12-10 Siemens Ag Schottkytransisitor-logic arrangements
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation

Also Published As

Publication number Publication date
JPS5499580A (en) 1979-08-06
DE2855816A1 (de) 1979-06-28
US4316202A (en) 1982-02-16
DE2855816C2 (de) 1983-10-06

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