JPS6318336B2 - - Google Patents

Info

Publication number
JPS6318336B2
JPS6318336B2 JP54016641A JP1664179A JPS6318336B2 JP S6318336 B2 JPS6318336 B2 JP S6318336B2 JP 54016641 A JP54016641 A JP 54016641A JP 1664179 A JP1664179 A JP 1664179A JP S6318336 B2 JPS6318336 B2 JP S6318336B2
Authority
JP
Japan
Prior art keywords
region
type
conductivity type
sbd
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54016641A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55108761A (en
Inventor
Susumu Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1664179A priority Critical patent/JPS55108761A/ja
Publication of JPS55108761A publication Critical patent/JPS55108761A/ja
Publication of JPS6318336B2 publication Critical patent/JPS6318336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP1664179A 1979-02-14 1979-02-14 Semiconductor integrated circuit device Granted JPS55108761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1664179A JPS55108761A (en) 1979-02-14 1979-02-14 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1664179A JPS55108761A (en) 1979-02-14 1979-02-14 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS55108761A JPS55108761A (en) 1980-08-21
JPS6318336B2 true JPS6318336B2 (en, 2012) 1988-04-18

Family

ID=11921974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1664179A Granted JPS55108761A (en) 1979-02-14 1979-02-14 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS55108761A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02131050U (en, 2012) * 1989-04-06 1990-10-30

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2234089C3 (de) * 1972-07-08 1975-01-23 Automatic Druckmaschinenfabrik Dr. W. Hinniger U. Soehne, 1000 Berlin Offset-Rollen-Rotationsdruckmaschine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02131050U (en, 2012) * 1989-04-06 1990-10-30

Also Published As

Publication number Publication date
JPS55108761A (en) 1980-08-21

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