JPS6155780B2 - - Google Patents

Info

Publication number
JPS6155780B2
JPS6155780B2 JP54105019A JP10501979A JPS6155780B2 JP S6155780 B2 JPS6155780 B2 JP S6155780B2 JP 54105019 A JP54105019 A JP 54105019A JP 10501979 A JP10501979 A JP 10501979A JP S6155780 B2 JPS6155780 B2 JP S6155780B2
Authority
JP
Japan
Prior art keywords
electrode
ohmic
layer
forming
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54105019A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5629340A (en
Inventor
Hirohisa Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP10501979A priority Critical patent/JPS5629340A/ja
Publication of JPS5629340A publication Critical patent/JPS5629340A/ja
Publication of JPS6155780B2 publication Critical patent/JPS6155780B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/30—
    • H10W72/073—
    • H10W72/07336—
    • H10W72/07337—

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP10501979A 1979-08-20 1979-08-20 Formation of electrode on semiconductor element Granted JPS5629340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10501979A JPS5629340A (en) 1979-08-20 1979-08-20 Formation of electrode on semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10501979A JPS5629340A (en) 1979-08-20 1979-08-20 Formation of electrode on semiconductor element

Publications (2)

Publication Number Publication Date
JPS5629340A JPS5629340A (en) 1981-03-24
JPS6155780B2 true JPS6155780B2 (enExample) 1986-11-29

Family

ID=14396341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10501979A Granted JPS5629340A (en) 1979-08-20 1979-08-20 Formation of electrode on semiconductor element

Country Status (1)

Country Link
JP (1) JPS5629340A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6320282U (enExample) * 1986-07-18 1988-02-10

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867078A (ja) * 1981-10-19 1983-04-21 Toshiba Corp 化合物半導体素子製造方法
KR100215338B1 (ko) * 1991-03-06 1999-08-16 가나이 쓰도무 반도체 장치의 제조방법
JP2008140811A (ja) * 2006-11-30 2008-06-19 Victor Co Of Japan Ltd 半導体素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6320282U (enExample) * 1986-07-18 1988-02-10

Also Published As

Publication number Publication date
JPS5629340A (en) 1981-03-24

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