JPS5629340A - Formation of electrode on semiconductor element - Google Patents
Formation of electrode on semiconductor elementInfo
- Publication number
- JPS5629340A JPS5629340A JP10501979A JP10501979A JPS5629340A JP S5629340 A JPS5629340 A JP S5629340A JP 10501979 A JP10501979 A JP 10501979A JP 10501979 A JP10501979 A JP 10501979A JP S5629340 A JPS5629340 A JP S5629340A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- oxide layer
- substrate
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W72/30—
-
- H10W72/073—
-
- H10W72/07336—
-
- H10W72/07337—
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10501979A JPS5629340A (en) | 1979-08-20 | 1979-08-20 | Formation of electrode on semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10501979A JPS5629340A (en) | 1979-08-20 | 1979-08-20 | Formation of electrode on semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5629340A true JPS5629340A (en) | 1981-03-24 |
| JPS6155780B2 JPS6155780B2 (enExample) | 1986-11-29 |
Family
ID=14396341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10501979A Granted JPS5629340A (en) | 1979-08-20 | 1979-08-20 | Formation of electrode on semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5629340A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5867078A (ja) * | 1981-10-19 | 1983-04-21 | Toshiba Corp | 化合物半導体素子製造方法 |
| US5336638A (en) * | 1991-03-06 | 1994-08-09 | Hitachi, Ltd. | Process for manufacturing semiconductor devices |
| JP2008140811A (ja) * | 2006-11-30 | 2008-06-19 | Victor Co Of Japan Ltd | 半導体素子の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6320282U (enExample) * | 1986-07-18 | 1988-02-10 |
-
1979
- 1979-08-20 JP JP10501979A patent/JPS5629340A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5867078A (ja) * | 1981-10-19 | 1983-04-21 | Toshiba Corp | 化合物半導体素子製造方法 |
| US5336638A (en) * | 1991-03-06 | 1994-08-09 | Hitachi, Ltd. | Process for manufacturing semiconductor devices |
| JP2008140811A (ja) * | 2006-11-30 | 2008-06-19 | Victor Co Of Japan Ltd | 半導体素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6155780B2 (enExample) | 1986-11-29 |
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