JPS6153868B2 - - Google Patents
Info
- Publication number
- JPS6153868B2 JPS6153868B2 JP58054138A JP5413883A JPS6153868B2 JP S6153868 B2 JPS6153868 B2 JP S6153868B2 JP 58054138 A JP58054138 A JP 58054138A JP 5413883 A JP5413883 A JP 5413883A JP S6153868 B2 JPS6153868 B2 JP S6153868B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- type region
- opposite conductivity
- region
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58054138A JPS58194367A (ja) | 1983-03-30 | 1983-03-30 | 絶縁ゲ−ト型電界効果半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58054138A JPS58194367A (ja) | 1983-03-30 | 1983-03-30 | 絶縁ゲ−ト型電界効果半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3549976A Division JPS52117586A (en) | 1976-03-30 | 1976-03-30 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58194367A JPS58194367A (ja) | 1983-11-12 |
JPS6153868B2 true JPS6153868B2 (enrdf_load_stackoverflow) | 1986-11-19 |
Family
ID=12962209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58054138A Granted JPS58194367A (ja) | 1983-03-30 | 1983-03-30 | 絶縁ゲ−ト型電界効果半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58194367A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01164677U (enrdf_load_stackoverflow) * | 1988-05-09 | 1989-11-16 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3221766B2 (ja) * | 1993-04-23 | 2001-10-22 | 三菱電機株式会社 | 電界効果トランジスタの製造方法 |
US5650340A (en) * | 1994-08-18 | 1997-07-22 | Sun Microsystems, Inc. | Method of making asymmetric low power MOS devices |
KR960026960A (ko) * | 1994-12-16 | 1996-07-22 | 리 패치 | 비대칭 저전력 모스(mos) 소자 |
-
1983
- 1983-03-30 JP JP58054138A patent/JPS58194367A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01164677U (enrdf_load_stackoverflow) * | 1988-05-09 | 1989-11-16 |
Also Published As
Publication number | Publication date |
---|---|
JPS58194367A (ja) | 1983-11-12 |
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