JPS58194367A - 絶縁ゲ−ト型電界効果半導体装置 - Google Patents

絶縁ゲ−ト型電界効果半導体装置

Info

Publication number
JPS58194367A
JPS58194367A JP58054138A JP5413883A JPS58194367A JP S58194367 A JPS58194367 A JP S58194367A JP 58054138 A JP58054138 A JP 58054138A JP 5413883 A JP5413883 A JP 5413883A JP S58194367 A JPS58194367 A JP S58194367A
Authority
JP
Japan
Prior art keywords
type regions
conductive type
region
reversely
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58054138A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6153868B2 (enrdf_load_stackoverflow
Inventor
Toshio Wada
和田　俊男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58054138A priority Critical patent/JPS58194367A/ja
Publication of JPS58194367A publication Critical patent/JPS58194367A/ja
Publication of JPS6153868B2 publication Critical patent/JPS6153868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
JP58054138A 1983-03-30 1983-03-30 絶縁ゲ−ト型電界効果半導体装置 Granted JPS58194367A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58054138A JPS58194367A (ja) 1983-03-30 1983-03-30 絶縁ゲ−ト型電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58054138A JPS58194367A (ja) 1983-03-30 1983-03-30 絶縁ゲ−ト型電界効果半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3549976A Division JPS52117586A (en) 1976-03-30 1976-03-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS58194367A true JPS58194367A (ja) 1983-11-12
JPS6153868B2 JPS6153868B2 (enrdf_load_stackoverflow) 1986-11-19

Family

ID=12962209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58054138A Granted JPS58194367A (ja) 1983-03-30 1983-03-30 絶縁ゲ−ト型電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS58194367A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451807A (en) * 1993-04-23 1995-09-19 Mitsubishi Denki Kabushiki Kaisha Metal oxide semiconductor field effect transistor
EP0717448A1 (en) * 1994-12-16 1996-06-19 Sun Microsystems, Inc. Asymmetric low power MOS devices
US5780912A (en) * 1994-08-18 1998-07-14 Sun Microsystems, Inc. Asymmetric low power MOS devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164677U (enrdf_load_stackoverflow) * 1988-05-09 1989-11-16

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451807A (en) * 1993-04-23 1995-09-19 Mitsubishi Denki Kabushiki Kaisha Metal oxide semiconductor field effect transistor
US5578509A (en) * 1993-04-23 1996-11-26 Mitsubishi Denki Kabushiki Kaisha Method of making a field effect transistor
US5780912A (en) * 1994-08-18 1998-07-14 Sun Microsystems, Inc. Asymmetric low power MOS devices
EP0717448A1 (en) * 1994-12-16 1996-06-19 Sun Microsystems, Inc. Asymmetric low power MOS devices

Also Published As

Publication number Publication date
JPS6153868B2 (enrdf_load_stackoverflow) 1986-11-19

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