JPS6146986B2 - - Google Patents

Info

Publication number
JPS6146986B2
JPS6146986B2 JP53044504A JP4450478A JPS6146986B2 JP S6146986 B2 JPS6146986 B2 JP S6146986B2 JP 53044504 A JP53044504 A JP 53044504A JP 4450478 A JP4450478 A JP 4450478A JP S6146986 B2 JPS6146986 B2 JP S6146986B2
Authority
JP
Japan
Prior art keywords
transistor
gate
voltage
capacitance
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53044504A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54136278A (en
Inventor
Kenji Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4450478A priority Critical patent/JPS54136278A/ja
Publication of JPS54136278A publication Critical patent/JPS54136278A/ja
Publication of JPS6146986B2 publication Critical patent/JPS6146986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP4450478A 1978-04-14 1978-04-14 Semiconductor device Granted JPS54136278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4450478A JPS54136278A (en) 1978-04-14 1978-04-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4450478A JPS54136278A (en) 1978-04-14 1978-04-14 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62202930A Division JPS63146469A (ja) 1987-08-14 1987-08-14 半導体装置

Publications (2)

Publication Number Publication Date
JPS54136278A JPS54136278A (en) 1979-10-23
JPS6146986B2 true JPS6146986B2 (en, 2012) 1986-10-16

Family

ID=12693373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4450478A Granted JPS54136278A (en) 1978-04-14 1978-04-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54136278A (en, 2012)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109375A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Mis type transistor protection circuit
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device
IT1211141B (it) * 1981-12-04 1989-09-29 Ates Componenti Elettron Circuito limitatore-trasduttore disegnali in alternata codificati in forma binaria, come stadio d'ingresso di un circuito integrato a igfet.
JPS58199969A (ja) * 1982-05-15 1983-11-21 宗平　忠晴 駐輪ボツクス
JPS59112708A (ja) * 1982-12-18 1984-06-29 Mitsubishi Electric Corp 入力保護回路
JPS60142556A (ja) * 1983-12-28 1985-07-27 Toshiba Corp 入力保護回路
US4745450A (en) * 1984-03-02 1988-05-17 Zilog, Inc. Integrated circuit high voltage protection
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
DE3583301D1 (de) * 1984-03-31 1991-08-01 Toshiba Kawasaki Kk Schutzanordnung fuer einen mos-transistor.
EP0161983B1 (en) * 1984-05-03 1992-07-01 Digital Equipment Corporation Input protection arrangement for vlsi integrated circuit devices
JPS6215851A (ja) * 1985-07-12 1987-01-24 Sanyo Electric Co Ltd 半導体装置
JPH0673377B2 (ja) * 1985-11-27 1994-09-14 日本電気株式会社 入力保護回路
JPH0616558B2 (ja) * 1987-01-28 1994-03-02 三菱電機株式会社 半導体装置の入力保護装置
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275187A (en) * 1975-12-18 1977-06-23 Mitsubishi Electric Corp Mos type semiconductor device

Also Published As

Publication number Publication date
JPS54136278A (en) 1979-10-23

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