JPS6142437B2 - - Google Patents

Info

Publication number
JPS6142437B2
JPS6142437B2 JP55086798A JP8679880A JPS6142437B2 JP S6142437 B2 JPS6142437 B2 JP S6142437B2 JP 55086798 A JP55086798 A JP 55086798A JP 8679880 A JP8679880 A JP 8679880A JP S6142437 B2 JPS6142437 B2 JP S6142437B2
Authority
JP
Japan
Prior art keywords
type
electrode
semiconductor crystal
layer
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55086798A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5712579A (en
Inventor
Yasuharu Suematsu
Shigehisa Arai
Katsumi Kishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO KOGYO DAIGAKUCHO
Original Assignee
TOKYO KOGYO DAIGAKUCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO KOGYO DAIGAKUCHO filed Critical TOKYO KOGYO DAIGAKUCHO
Priority to JP8679880A priority Critical patent/JPS5712579A/ja
Publication of JPS5712579A publication Critical patent/JPS5712579A/ja
Publication of JPS6142437B2 publication Critical patent/JPS6142437B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP8679880A 1980-06-26 1980-06-26 Buried type semiconductor laser Granted JPS5712579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8679880A JPS5712579A (en) 1980-06-26 1980-06-26 Buried type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8679880A JPS5712579A (en) 1980-06-26 1980-06-26 Buried type semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5712579A JPS5712579A (en) 1982-01-22
JPS6142437B2 true JPS6142437B2 (enExample) 1986-09-20

Family

ID=13896803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8679880A Granted JPS5712579A (en) 1980-06-26 1980-06-26 Buried type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5712579A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176774U (ja) * 1982-05-21 1983-11-26 株式会社洋釣漁具 烏賊釣針
JPS58176773U (ja) * 1982-05-21 1983-11-26 株式会社洋釣漁具 烏賊釣針
JP3241360B2 (ja) * 1989-03-31 2001-12-25 三菱化学株式会社 光半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110286A (enExample) * 1973-02-21 1974-10-21
JPS51138394A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Semiconductor device
JPS6054797B2 (ja) * 1978-07-18 1985-12-02 日本電気株式会社 半導体接合レ−ザ

Also Published As

Publication number Publication date
JPS5712579A (en) 1982-01-22

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