JPS6137707B2 - - Google Patents

Info

Publication number
JPS6137707B2
JPS6137707B2 JP55147773A JP14777380A JPS6137707B2 JP S6137707 B2 JPS6137707 B2 JP S6137707B2 JP 55147773 A JP55147773 A JP 55147773A JP 14777380 A JP14777380 A JP 14777380A JP S6137707 B2 JPS6137707 B2 JP S6137707B2
Authority
JP
Japan
Prior art keywords
bit line
voltage
cell
potential
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55147773A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5771580A (en
Inventor
Yoshihiro Takemae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55147773A priority Critical patent/JPS5771580A/ja
Priority to US06/313,616 priority patent/US4458336A/en
Priority to DE8181304967T priority patent/DE3176601D1/de
Priority to EP87104318A priority patent/EP0239913B2/en
Priority to IE2483/81A priority patent/IE53512B1/en
Priority to EP81304967A priority patent/EP0050529B1/en
Priority to DE8787104318T priority patent/DE3177221D1/de
Publication of JPS5771580A publication Critical patent/JPS5771580A/ja
Publication of JPS6137707B2 publication Critical patent/JPS6137707B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
JP55147773A 1980-10-22 1980-10-22 Semiconductor memory device Granted JPS5771580A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP55147773A JPS5771580A (en) 1980-10-22 1980-10-22 Semiconductor memory device
US06/313,616 US4458336A (en) 1980-10-22 1981-10-21 Semiconductor memory circuit
DE8181304967T DE3176601D1 (en) 1980-10-22 1981-10-22 Semiconductor memory circuit
EP87104318A EP0239913B2 (en) 1980-10-22 1981-10-22 Semiconductor memory circuit
IE2483/81A IE53512B1 (en) 1980-10-22 1981-10-22 Semiconductor memory circuit
EP81304967A EP0050529B1 (en) 1980-10-22 1981-10-22 Semiconductor memory circuit
DE8787104318T DE3177221D1 (de) 1980-10-22 1981-10-22 Halbleiterspeicherschaltung.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147773A JPS5771580A (en) 1980-10-22 1980-10-22 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5771580A JPS5771580A (en) 1982-05-04
JPS6137707B2 true JPS6137707B2 (US20020051482A1-20020502-M00012.png) 1986-08-25

Family

ID=15437847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147773A Granted JPS5771580A (en) 1980-10-22 1980-10-22 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5771580A (US20020051482A1-20020502-M00012.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62193803U (US20020051482A1-20020502-M00012.png) * 1986-05-28 1987-12-09

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812759B2 (ja) * 1984-04-06 1996-02-07 株式会社日立製作所 ダイナミック型ｒａｍ
JPS6394499A (ja) * 1986-10-07 1988-04-25 Toshiba Corp 半導体記憶装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor
JPS5359384A (en) * 1976-09-13 1978-05-29 Texas Instruments Inc Nnchannel mos silicon gate ram cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor
JPS5359384A (en) * 1976-09-13 1978-05-29 Texas Instruments Inc Nnchannel mos silicon gate ram cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62193803U (US20020051482A1-20020502-M00012.png) * 1986-05-28 1987-12-09

Also Published As

Publication number Publication date
JPS5771580A (en) 1982-05-04

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