JPS6129153A - 凹凸基板の平坦化方法 - Google Patents

凹凸基板の平坦化方法

Info

Publication number
JPS6129153A
JPS6129153A JP59149586A JP14958684A JPS6129153A JP S6129153 A JPS6129153 A JP S6129153A JP 59149586 A JP59149586 A JP 59149586A JP 14958684 A JP14958684 A JP 14958684A JP S6129153 A JPS6129153 A JP S6129153A
Authority
JP
Japan
Prior art keywords
resin
irregular surface
substrate
surface substrate
silicone resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59149586A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0578939B2 (enrdf_load_stackoverflow
Inventor
Shunichi Fukuyama
俊一 福山
Yasuhiro Yoneda
泰博 米田
Masashi Miyagawa
昌士 宮川
Kota Nishii
耕太 西井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59149586A priority Critical patent/JPS6129153A/ja
Publication of JPS6129153A publication Critical patent/JPS6129153A/ja
Publication of JPH0578939B2 publication Critical patent/JPH0578939B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59149586A 1984-07-20 1984-07-20 凹凸基板の平坦化方法 Granted JPS6129153A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59149586A JPS6129153A (ja) 1984-07-20 1984-07-20 凹凸基板の平坦化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59149586A JPS6129153A (ja) 1984-07-20 1984-07-20 凹凸基板の平坦化方法

Publications (2)

Publication Number Publication Date
JPS6129153A true JPS6129153A (ja) 1986-02-10
JPH0578939B2 JPH0578939B2 (enrdf_load_stackoverflow) 1993-10-29

Family

ID=15478436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59149586A Granted JPS6129153A (ja) 1984-07-20 1984-07-20 凹凸基板の平坦化方法

Country Status (1)

Country Link
JP (1) JPS6129153A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106948A (ja) * 1988-10-17 1990-04-19 Fujitsu Ltd 半導体装置の製造方法
US4939568A (en) * 1986-03-20 1990-07-03 Fujitsu Limited Three-dimensional integrated circuit and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
JPS5957437A (ja) * 1982-09-28 1984-04-03 Fujitsu Ltd 酸化珪素膜の形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
JPS5957437A (ja) * 1982-09-28 1984-04-03 Fujitsu Ltd 酸化珪素膜の形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939568A (en) * 1986-03-20 1990-07-03 Fujitsu Limited Three-dimensional integrated circuit and manufacturing method thereof
JPH02106948A (ja) * 1988-10-17 1990-04-19 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0578939B2 (enrdf_load_stackoverflow) 1993-10-29

Similar Documents

Publication Publication Date Title
KR900005894B1 (ko) 표면이 평평한 절연층의 형성방법
JPS63107122A (ja) 凹凸基板の平坦化方法
JPH0230572B2 (enrdf_load_stackoverflow)
US20020198353A1 (en) Polycarbosilane adhesion promoters for low dielectric constant polymeric materials
Elsner Residual stress and thermal expansion of spun‐on polyimide films
JP2003501518A (ja) ポリカルボシランから生じた低誘電率ポリオルガノシリコンコーティング
EP0869515B1 (en) Composition and process for forming electrically insulating thin films
JPS6046826B2 (ja) 半導体装置
US5070182A (en) Polyimide resin and insulating film for electric and electronic devices
JPS6129153A (ja) 凹凸基板の平坦化方法
Houbertz et al. Inorganic-organic hybrid materials for polymer electronic applications
JPS60124943A (ja) 酸化珪素膜の形成方法
JPH0788426B2 (ja) 耐熱性樹脂の製造方法
JPS62261149A (ja) 半導体装置の製造方法
JPS6366418B2 (enrdf_load_stackoverflow)
JPS60177659A (ja) 半導体装置の製造方法
JPS62290139A (ja) 耐熱樹脂組成物
JPS62290151A (ja) 耐熱樹脂組成物
JPS6372142A (ja) 半導体装置の製造方法
JPH10144672A (ja) 半導体装置の絶縁膜形成方法及び絶縁膜形成材料
JPH04359056A (ja) 樹脂組成物と層間絶縁膜の形成方法
JPH02192729A (ja) 絶縁層の製造方法
JPH01313942A (ja) 半導体装置
JP2979558B2 (ja) 半導体装置の多層配線層間絶縁膜の形成方法
JPH04185641A (ja) 耐熱性樹脂組成物と絶縁膜の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees