JPH0230572B2 - - Google Patents

Info

Publication number
JPH0230572B2
JPH0230572B2 JP58052529A JP5252983A JPH0230572B2 JP H0230572 B2 JPH0230572 B2 JP H0230572B2 JP 58052529 A JP58052529 A JP 58052529A JP 5252983 A JP5252983 A JP 5252983A JP H0230572 B2 JPH0230572 B2 JP H0230572B2
Authority
JP
Japan
Prior art keywords
sio
resin
layer
film
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58052529A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59178749A (ja
Inventor
Shiro Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5252983A priority Critical patent/JPS59178749A/ja
Publication of JPS59178749A publication Critical patent/JPS59178749A/ja
Publication of JPH0230572B2 publication Critical patent/JPH0230572B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP5252983A 1983-03-30 1983-03-30 配線構造体 Granted JPS59178749A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5252983A JPS59178749A (ja) 1983-03-30 1983-03-30 配線構造体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5252983A JPS59178749A (ja) 1983-03-30 1983-03-30 配線構造体

Publications (2)

Publication Number Publication Date
JPS59178749A JPS59178749A (ja) 1984-10-11
JPH0230572B2 true JPH0230572B2 (enrdf_load_stackoverflow) 1990-07-06

Family

ID=12917275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5252983A Granted JPS59178749A (ja) 1983-03-30 1983-03-30 配線構造体

Country Status (1)

Country Link
JP (1) JPS59178749A (enrdf_load_stackoverflow)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219928A (ja) * 1986-03-20 1987-09-28 Fujitsu Ltd 絶縁膜の形成方法
JP2565351B2 (ja) * 1987-07-27 1996-12-18 京セラ株式会社 電子回路部品
JP2565362B2 (ja) * 1987-12-28 1996-12-18 京セラ株式会社 多層配線基板の製造方法
US5387480A (en) 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
US5693701A (en) 1995-10-26 1997-12-02 Dow Corning Corporation Tamper-proof electronic coatings
US5753374A (en) 1995-11-27 1998-05-19 Dow Corning Corporation Protective electronic coating
US5609925A (en) 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
US5807611A (en) * 1996-10-04 1998-09-15 Dow Corning Corporation Electronic coatings
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
US5707681A (en) * 1997-02-07 1998-01-13 Dow Corning Corporation Method of producing coatings on electronic substrates
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
TW392288B (en) 1997-06-06 2000-06-01 Dow Corning Thermally stable dielectric coatings
US5906859A (en) * 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
US6572974B1 (en) 1999-12-06 2003-06-03 The Regents Of The University Of Michigan Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6913796B2 (en) 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6756085B2 (en) 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
WO2006049720A1 (en) 2004-11-02 2006-05-11 Dow Corning Corporation Resist composition
WO2008002975A2 (en) 2006-06-28 2008-01-03 Dow Corning Corporation Silsesquioxane resin systems with base additives bearing electron- attracting functionalities
KR101216060B1 (ko) 2006-06-28 2012-12-28 도쿄 오카 고교 가부시키가이샤 전자 유인성 관능 그룹을 갖는 염기 첨가제를 함유한 실세스퀴옥산 수지 시스템
WO2012064534A1 (en) 2010-11-09 2012-05-18 Dow Corning Corporation Hydrosilylation cured silicone resins plasticized by organophosphorous compounds
KR102301276B1 (ko) 2014-04-09 2021-09-14 다우 실리콘즈 코포레이션 소수성 용품
WO2015164068A2 (en) 2014-04-09 2015-10-29 Dow Corning Corporation Optical element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852327B2 (ja) * 1975-08-15 1983-11-22 日本電気株式会社 ハンドウタイソシノ セイゾウホウホウ
JPS5477557A (en) * 1978-11-15 1979-06-21 Toshiba Corp Monostable multivibrator circuit

Also Published As

Publication number Publication date
JPS59178749A (ja) 1984-10-11

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