JPH0578939B2 - - Google Patents

Info

Publication number
JPH0578939B2
JPH0578939B2 JP59149586A JP14958684A JPH0578939B2 JP H0578939 B2 JPH0578939 B2 JP H0578939B2 JP 59149586 A JP59149586 A JP 59149586A JP 14958684 A JP14958684 A JP 14958684A JP H0578939 B2 JPH0578939 B2 JP H0578939B2
Authority
JP
Japan
Prior art keywords
sio
uneven substrate
silicone resin
temperature
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59149586A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129153A (ja
Inventor
Shunichi Fukuyama
Yasuhiro Yoneda
Masashi Myagawa
Kota Nishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59149586A priority Critical patent/JPS6129153A/ja
Publication of JPS6129153A publication Critical patent/JPS6129153A/ja
Publication of JPH0578939B2 publication Critical patent/JPH0578939B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59149586A 1984-07-20 1984-07-20 凹凸基板の平坦化方法 Granted JPS6129153A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59149586A JPS6129153A (ja) 1984-07-20 1984-07-20 凹凸基板の平坦化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59149586A JPS6129153A (ja) 1984-07-20 1984-07-20 凹凸基板の平坦化方法

Publications (2)

Publication Number Publication Date
JPS6129153A JPS6129153A (ja) 1986-02-10
JPH0578939B2 true JPH0578939B2 (enrdf_load_stackoverflow) 1993-10-29

Family

ID=15478436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59149586A Granted JPS6129153A (ja) 1984-07-20 1984-07-20 凹凸基板の平坦化方法

Country Status (1)

Country Link
JP (1) JPS6129153A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900008647B1 (ko) * 1986-03-20 1990-11-26 후지쓰 가부시끼가이샤 3차원 집적회로와 그의 제조방법
JPH02106948A (ja) * 1988-10-17 1990-04-19 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
JPS5957437A (ja) * 1982-09-28 1984-04-03 Fujitsu Ltd 酸化珪素膜の形成方法

Also Published As

Publication number Publication date
JPS6129153A (ja) 1986-02-10

Similar Documents

Publication Publication Date Title
KR900005894B1 (ko) 표면이 평평한 절연층의 형성방법
JPH0230572B2 (enrdf_load_stackoverflow)
JPS63107122A (ja) 凹凸基板の平坦化方法
US20020064965A1 (en) Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
JPS59109565A (ja) コ−テイング樹脂溶液およびその製造方法
JP4049775B2 (ja) 有機シリケート重合体およびこれを含む絶縁膜
TWI881150B (zh) 導熱性聚矽氧散熱材料
US6764718B2 (en) Method for forming thin film from electrically insulating resin composition
EP0869515B1 (en) Composition and process for forming electrically insulating thin films
JP3819391B2 (ja) 有機シリケート重合体の製造方法、及びこれを利用した絶縁膜の製造方法
JPS6046826B2 (ja) 半導体装置
JPH0615770A (ja) 金属／ポリイミド構造体における金属の不動態化
JPH0578939B2 (enrdf_load_stackoverflow)
JPS60124943A (ja) 酸化珪素膜の形成方法
KR20010094928A (ko) 전기 절연성 박막 형성성 수지 조성물 및 이로부터의박막의 형성방법
JPS6366418B2 (enrdf_load_stackoverflow)
JP3489946B2 (ja) 半導体装置の絶縁膜形成方法及び絶縁膜形成材料
JPS62290139A (ja) 耐熱樹脂組成物
JP4324786B2 (ja) 積層体およびその製造方法ならびに絶縁膜および半導体装置
KR100440488B1 (ko) 반도체의 절연막 형성용 유기실리케이트 고분자 및 이를포함하는 저유전 절연막
JPH01313942A (ja) 半導体装置
JPH04359056A (ja) 樹脂組成物と層間絶縁膜の形成方法
JPS63152673A (ja) 耐熱樹脂組成物
JPS6372142A (ja) 半導体装置の製造方法
JPH04185639A (ja) 絶縁膜の形成方法および半導体装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees