JPS59178749A - 配線構造体 - Google Patents

配線構造体

Info

Publication number
JPS59178749A
JPS59178749A JP5252983A JP5252983A JPS59178749A JP S59178749 A JPS59178749 A JP S59178749A JP 5252983 A JP5252983 A JP 5252983A JP 5252983 A JP5252983 A JP 5252983A JP S59178749 A JPS59178749 A JP S59178749A
Authority
JP
Japan
Prior art keywords
resin
layer
h3sio
film
insulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5252983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0230572B2 (enrdf_load_stackoverflow
Inventor
Shiro Takeda
武田　志郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5252983A priority Critical patent/JPS59178749A/ja
Publication of JPS59178749A publication Critical patent/JPS59178749A/ja
Publication of JPH0230572B2 publication Critical patent/JPH0230572B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP5252983A 1983-03-30 1983-03-30 配線構造体 Granted JPS59178749A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5252983A JPS59178749A (ja) 1983-03-30 1983-03-30 配線構造体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5252983A JPS59178749A (ja) 1983-03-30 1983-03-30 配線構造体

Publications (2)

Publication Number Publication Date
JPS59178749A true JPS59178749A (ja) 1984-10-11
JPH0230572B2 JPH0230572B2 (enrdf_load_stackoverflow) 1990-07-06

Family

ID=12917275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5252983A Granted JPS59178749A (ja) 1983-03-30 1983-03-30 配線構造体

Country Status (1)

Country Link
JP (1) JPS59178749A (enrdf_load_stackoverflow)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219928A (ja) * 1986-03-20 1987-09-28 Fujitsu Ltd 絶縁膜の形成方法
JPS6430294A (en) * 1987-07-27 1989-02-01 Kyocera Corp Electronic circuit component
JPH01173784A (ja) * 1987-12-28 1989-07-10 Kyocera Corp 多層配線基板の製造方法
EP0615000A1 (en) 1993-03-08 1994-09-14 Dow Corning Corporation Coatings using filled hydrogen silsequioxane
EP0770652A2 (en) 1995-10-26 1997-05-02 Dow Corning Corporation Tamper-proof electronic coatings
EP0775680A1 (en) 1995-11-27 1997-05-28 Dow Corning Corporation Protective coating for electronic devices
EP0778612A2 (en) 1995-12-04 1997-06-11 Dow Corning Corporation Method of curing hydrogen silsesquioxane resin by electron beam to convert it to a silica containing ceramic coating
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
US5707681A (en) * 1997-02-07 1998-01-13 Dow Corning Corporation Method of producing coatings on electronic substrates
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
US5807611A (en) * 1996-10-04 1998-09-15 Dow Corning Corporation Electronic coatings
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
US5906859A (en) * 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
US6210749B1 (en) 1997-06-06 2001-04-03 Dow Corning, Corporation Thermally stable dielectric coatings
EP1107330A2 (en) 1999-12-06 2001-06-13 Dow Corning Corporation Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6756085B2 (en) 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6913796B2 (en) 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US8088547B2 (en) 2004-11-02 2012-01-03 Dow Corning Corporation Resist composition
US8148043B2 (en) 2006-06-28 2012-04-03 Dow Corning Corporation Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
US8524439B2 (en) 2006-06-28 2013-09-03 Dow Corning Corporation Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
US9012547B2 (en) 2010-11-09 2015-04-21 Dow Corning Corporation Hydrosilylation cured silicone resins plasticized by organophosphorous compounds
US10358561B2 (en) 2014-04-09 2019-07-23 Dow Silicones Corporation Hydrophobic article
US10473822B2 (en) 2014-04-09 2019-11-12 Dow Silicones Corporation Optical element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223273A (en) * 1975-08-15 1977-02-22 Nec Corp Method of manufacturing semiconductor element
JPS5477557A (en) * 1978-11-15 1979-06-21 Toshiba Corp Monostable multivibrator circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223273A (en) * 1975-08-15 1977-02-22 Nec Corp Method of manufacturing semiconductor element
JPS5477557A (en) * 1978-11-15 1979-06-21 Toshiba Corp Monostable multivibrator circuit

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219928A (ja) * 1986-03-20 1987-09-28 Fujitsu Ltd 絶縁膜の形成方法
JPS6430294A (en) * 1987-07-27 1989-02-01 Kyocera Corp Electronic circuit component
JPH01173784A (ja) * 1987-12-28 1989-07-10 Kyocera Corp 多層配線基板の製造方法
EP0615000A1 (en) 1993-03-08 1994-09-14 Dow Corning Corporation Coatings using filled hydrogen silsequioxane
EP0770652A2 (en) 1995-10-26 1997-05-02 Dow Corning Corporation Tamper-proof electronic coatings
EP0775680A1 (en) 1995-11-27 1997-05-28 Dow Corning Corporation Protective coating for electronic devices
EP0778612A2 (en) 1995-12-04 1997-06-11 Dow Corning Corporation Method of curing hydrogen silsesquioxane resin by electron beam to convert it to a silica containing ceramic coating
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
US6144106A (en) * 1996-10-04 2000-11-07 Dow Corning Corporation Electronic coatings
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
US5807611A (en) * 1996-10-04 1998-09-15 Dow Corning Corporation Electronic coatings
US5707681A (en) * 1997-02-07 1998-01-13 Dow Corning Corporation Method of producing coatings on electronic substrates
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
US6022625A (en) * 1997-06-06 2000-02-08 Dow Corning Corporation Method for producing thick crack-free coatings from hydrogen silsesquioxane resin
US6210749B1 (en) 1997-06-06 2001-04-03 Dow Corning, Corporation Thermally stable dielectric coatings
US5906859A (en) * 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
EP1107330A2 (en) 1999-12-06 2001-06-13 Dow Corning Corporation Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6759133B2 (en) 2000-03-20 2004-07-06 Dow Corning Corporation High modulus, low dielectric constant coatings
US6913796B2 (en) 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6756085B2 (en) 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US8088547B2 (en) 2004-11-02 2012-01-03 Dow Corning Corporation Resist composition
US8148043B2 (en) 2006-06-28 2012-04-03 Dow Corning Corporation Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
US8524439B2 (en) 2006-06-28 2013-09-03 Dow Corning Corporation Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
US9012547B2 (en) 2010-11-09 2015-04-21 Dow Corning Corporation Hydrosilylation cured silicone resins plasticized by organophosphorous compounds
US10358561B2 (en) 2014-04-09 2019-07-23 Dow Silicones Corporation Hydrophobic article
US10473822B2 (en) 2014-04-09 2019-11-12 Dow Silicones Corporation Optical element

Also Published As

Publication number Publication date
JPH0230572B2 (enrdf_load_stackoverflow) 1990-07-06

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