JPS5223273A - Method of manufacturing semiconductor element - Google Patents

Method of manufacturing semiconductor element

Info

Publication number
JPS5223273A
JPS5223273A JP9931875A JP9931875A JPS5223273A JP S5223273 A JPS5223273 A JP S5223273A JP 9931875 A JP9931875 A JP 9931875A JP 9931875 A JP9931875 A JP 9931875A JP S5223273 A JPS5223273 A JP S5223273A
Authority
JP
Japan
Prior art keywords
semiconductor element
manufacturing semiconductor
manufacturing
corner
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9931875A
Other languages
Japanese (ja)
Other versions
JPS5852327B2 (en
Inventor
Kazuhiko Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50099318A priority Critical patent/JPS5852327B2/en
Publication of JPS5223273A publication Critical patent/JPS5223273A/en
Publication of JPS5852327B2 publication Critical patent/JPS5852327B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Dicing (AREA)

Abstract

PURPOSE: Method of manufacturing a semiconductor device which does not short even when the bonding wire contacts the corner of the element.
COPYRIGHT: (C)1977,JPO&Japio
JP50099318A 1975-08-15 1975-08-15 Handout Taisoshino Seizouhouhou Expired JPS5852327B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50099318A JPS5852327B2 (en) 1975-08-15 1975-08-15 Handout Taisoshino Seizouhouhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50099318A JPS5852327B2 (en) 1975-08-15 1975-08-15 Handout Taisoshino Seizouhouhou

Publications (2)

Publication Number Publication Date
JPS5223273A true JPS5223273A (en) 1977-02-22
JPS5852327B2 JPS5852327B2 (en) 1983-11-22

Family

ID=14244278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50099318A Expired JPS5852327B2 (en) 1975-08-15 1975-08-15 Handout Taisoshino Seizouhouhou

Country Status (1)

Country Link
JP (1) JPS5852327B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178749A (en) * 1983-03-30 1984-10-11 Fujitsu Ltd Wiring structure
JPS60144684A (en) * 1983-12-31 1985-07-31 Shimadzu Corp Simultaneous counting circuit
JPS63262844A (en) * 1987-04-10 1988-10-31 エアー．プロダクツ．アンド．ケミカルス．インコーポレーテツド Method of forming silicon dioxide glass film
US6844568B2 (en) * 2002-04-25 2005-01-18 Kyocera Corporation Photoelectric conversion device and manufacturing process thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178749A (en) * 1983-03-30 1984-10-11 Fujitsu Ltd Wiring structure
JPH0230572B2 (en) * 1983-03-30 1990-07-06 Fujitsu Ltd
JPS60144684A (en) * 1983-12-31 1985-07-31 Shimadzu Corp Simultaneous counting circuit
JPH0557550B2 (en) * 1983-12-31 1993-08-24 Shimadzu Corp
JPS63262844A (en) * 1987-04-10 1988-10-31 エアー．プロダクツ．アンド．ケミカルス．インコーポレーテツド Method of forming silicon dioxide glass film
US6844568B2 (en) * 2002-04-25 2005-01-18 Kyocera Corporation Photoelectric conversion device and manufacturing process thereof

Also Published As

Publication number Publication date
JPS5852327B2 (en) 1983-11-22

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