JPS61289621A - 分子線エピタキシヤル成長方法 - Google Patents

分子線エピタキシヤル成長方法

Info

Publication number
JPS61289621A
JPS61289621A JP13072085A JP13072085A JPS61289621A JP S61289621 A JPS61289621 A JP S61289621A JP 13072085 A JP13072085 A JP 13072085A JP 13072085 A JP13072085 A JP 13072085A JP S61289621 A JPS61289621 A JP S61289621A
Authority
JP
Japan
Prior art keywords
substrate
protective film
temperature
crystal
molecular beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13072085A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0473609B2 (enExample
Inventor
Kazuo Sakai
堺　和夫
Yuichi Matsushima
松島　裕一
Shigeyuki Akiba
重幸 秋葉
Katsuyuki Uko
宇高　勝之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP13072085A priority Critical patent/JPS61289621A/ja
Publication of JPS61289621A publication Critical patent/JPS61289621A/ja
Publication of JPH0473609B2 publication Critical patent/JPH0473609B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP13072085A 1985-06-18 1985-06-18 分子線エピタキシヤル成長方法 Granted JPS61289621A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13072085A JPS61289621A (ja) 1985-06-18 1985-06-18 分子線エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13072085A JPS61289621A (ja) 1985-06-18 1985-06-18 分子線エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS61289621A true JPS61289621A (ja) 1986-12-19
JPH0473609B2 JPH0473609B2 (enExample) 1992-11-24

Family

ID=15041013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13072085A Granted JPS61289621A (ja) 1985-06-18 1985-06-18 分子線エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS61289621A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182315A (ja) * 2008-02-01 2009-08-13 Nippon Mining & Metals Co Ltd 半導体基板の表面処理方法、半導体基板、及び薄膜形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119090A (ja) * 1984-11-14 1986-06-06 Rohm Co Ltd 半導体レ−ザの製造方法
JPS61232608A (ja) * 1985-04-08 1986-10-16 Sharp Corp 半導体素子の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119090A (ja) * 1984-11-14 1986-06-06 Rohm Co Ltd 半導体レ−ザの製造方法
JPS61232608A (ja) * 1985-04-08 1986-10-16 Sharp Corp 半導体素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182315A (ja) * 2008-02-01 2009-08-13 Nippon Mining & Metals Co Ltd 半導体基板の表面処理方法、半導体基板、及び薄膜形成方法

Also Published As

Publication number Publication date
JPH0473609B2 (enExample) 1992-11-24

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